2N3820_D26Z

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 2N3820 is a silicon-gate JFET (Junction Field Effect Transistor). It was specifically designed for use in low-noise, low-power switching applications, and is particularly well suited to single-ended applications. It is suitable for instrumentation and industrial control applications, as well as for use in low-noise environments such as RF amplifiers and pre-amps. The 2N3820 is intended to be used in pulsed applications where high peak current load is necessary. The device is also suitable for use in high-frequency switching applications.

The 2N3820 features a low threshold voltage of 0.7V, making it well suited for use in RF amplifiers and pre-amps. The device has a maximum power dissipation of 1 watt and maximum drain current of 200 mA. The 2N3820 is also well suited for low-noise, low-power switching applications, making it ideal for applications requiring low current or where power savings is important. The device is also suitable for use in high-frequency switching applications.

In terms of its working principle, a 2N3820 is a voltage-controlled field-effect transistor, which means that the current between its source and drain is controlled by the voltage applied between its gate and source terminals. In particular, for a negative-channel JFET, if we apply a positive voltage to the gate terminal, we induce an electric field which pulls electrons out of the channel, resulting in a decrease in the drain current. Conversely, if we apply a negative voltage to the gate terminal, we induce an electric field which pushes electrons into the channel, resulting in an increase in the drain current.

The 2N3820 is widely used in timing circuits, RF and low-noise amplifiers and pre-amps, and power switches, as well as industrial control and instrumentation applications. Its low threshold voltage makes it well suited for applications requiring low current or power savings. Additionally, its low-noise capabilities make it well suited for use in low-noise environments such as radio frequency amplifiers and pre-amps.

In summary, the 2N3820 is a silicon-gate JFET, featuring a low threshold voltage of 0.7V, a maximum power dissipation of 1 watt, and a maximum drain current of 200mA. It is particularly well suited for low-noise, low-power switching applications and single-ended applications, as well as for use in RF amplifiers and pre-amps. Its working principle is that of a voltage-controlled field-effect transistor, where the current between its source and drain is controlled by the voltage applied between its gate and source terminals. The device is widely used in timing circuits, RF amplifiers and pre-amps, and power switching applications, as well as industrial control and instrumentation applications.

The specific data is subject to PDF, and the above content is for reference