2N3859A Allicdata Electronics
Allicdata Part #:

2N3859A-ND

Manufacturer Part#:

2N3859A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 60V 0.5A TO-92
More Detail: Bipolar (BJT) Transistor NPN 60V 500mA 250MHz 625m...
DataSheet: 2N3859A datasheet2N3859A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: --
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 1V
Power - Max: 625mW
Frequency - Transition: 250MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Base Part Number: 2N3859
Description

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2N3859A is a single bipolar junction transistor (BJT). Transistors of this type are widely used in electronics for both amplification and switching. The 2N3859A is a general purpose transistor and is typically used as a switching device in systems that require a low collector-emitter saturation voltage. It was initially developed for use in telephone rings and alarms, but it can now be found in many applications, from small consumer-facing products to large industrial machines.

A transistor is an active electronic device that is used to control the flow of current in a circuit. It is composed of three main parts: the emitter, the collector, and the base. The base is used to control the flow of current between the emitter and the collector by adjusting the base current. The emitter is the source of electrons and holes and the collector is the point where the electrons and holes recombine, releasing energy.

The 2N3859A is a NPN-type bipolar transistor, meaning that the emitter is connected to the negative side of the circuit and the collector is connected to the positive side. This device is a switching transistor, meaning that current can only flow from the emitter to the collector when the base current is high enough to forward-bias the junction. This allows for the transistor to act as a switch, turning on and off in response to changes in the base current.

The 2N3859A has a low saturation voltage of 0.4V, which makes it well-suited for applications that require a low voltage. It is also rated for high currents, up to 600mA, making it suitable for switching applications where high currents are involved. The 2N3859A can be used in both digital and analog applications, and its low saturation voltage makes it a popular choice for many small consumer-facing products.

In addition to its low saturation voltage, the 2N3859A has a high gain-bandwidth product (fT) of 300MHz, making it suitable for amplifying signals in a wide range of frequencies. It also has a high collector-emitter breakdown voltage (BVCEO) of 40V, allowing it to be used in high-voltage applications. The 2N3859A is also stable with temperature changes, making it suitable for harsh operating environments.

The 2N3859A is a versatile transistor that is well-suited for a wide range of applications. Its low saturation voltage, high gain-bandwidth product, and high breakdown voltage make it a popular choice for digital and analog applications. Its temperature stability and ability to handle high currents make it ideal for use in harsh environments, such as automotive and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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