Allicdata Part #: | 2N4123TA-ND |
Manufacturer Part#: |
2N4123TA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 30V 0.2A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN 30V 200mA 250MHz 625m... |
DataSheet: | 2N4123TA Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 200mA |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 2mA, 1V |
Power - Max: | 625mW |
Frequency - Transition: | 250MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | 2N4123 |
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.The transistor 2N4123TA is a small signal NPN, bipolar junction transistor (BJT). In most cases, it is also referred to as an NPN Silicon BJT. It is widely used in numerous applications, ranging from amplifiers and voltage regulators to simple switch circuits. Additionally, its simplicity makes it a preferred choice over more complex electronic components. This discussion will cover the application field and working principle of the 2N4123TA.
2N4123TA Application Field
The 2N4123TA is a widely used bipolar junction transistor, suitable for a broad range of applications. Its high current gain and low saturation voltage make it ideal for nonlinear circuits and as an amplifier. Also, its characteristics are beneficial for handling signals with high power levels.
The 2N4123TA is an excellent choice for switching applications. Its small size and low power consumption makes it ideal for less power-consuming devices, such as relays and motors. Additionally, its high switching speed enables the transistor to quickly switch between two states. This makes the 2N4123TA an ideal component for consumer electronics, such as, handheld devices and small audio appliances.
The 2N4123TA is also widely used in RF and telecom applications. Its high stability and low capacitance enable it to handle signals in the high and ultrahigh-frequency range. As such, it can be used in receivers, transmitters, and communication parts.
Finally, the 2N4123TA is suitable for analog or digital circuits. Its low collector-emitter saturation voltage below 0.4 V is useful for sign conversion in digital circuits and low-level switching in analog circuits. Additionally, its high break-down voltage exceeds 150 V, making it suitable for use in high-voltage applications.
2N4123TA Working Principle
The 2N4123TA works by amplifying and switching electrical signals. It is also referred to as an NPN transistor due to the semiconducting material used in it. The material used is usually silicon since it is well-suited for high frequency and high voltage applications.
The 2N4123TA is composed of three main parts: a base, an emitter and a collector. A current is always passing through the base and emitter, which makes the emitter-base junction become a semiconductor diode. The current then flows through the collector, where it is amplified and can then be used in electronic circuits.
The main advantage of using the 2N4123TA is that it can amplify small signals and switch larger signals, enabling it to handle signals with both high current and high voltage. This makes it suitable for many applications and devices, from switching relays to high-frequency circuits.
Conclusion
The 2N4123TA is a widely used NPN bipolar junction transistor. It is suitable for a variety of applications, ranging from amplifiers to RF and telecom circuits. Thanks to its versatile characteristics, it can be used in both digital and analog circuits. Additionally, its low power consumption makes it ideal for less power-consuming devices, such as relays and motors. Overall, this makes the 2N4123TA a preferred choice for various applications.
The specific data is subject to PDF, and the above content is for reference
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