2N4123RLRM

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Bipolar junction transistor (BJT) is one of the two types of transistors which are commonly available in the market. The other type is the field-effect transistor (FET). Unlike the FET, BJT is a current controlled device and its main purpose is to amplify the input current or voltage. With the current rise, the output current also gets amplified and this makes the BJT more useful in small signal application fields. Even though BJT is commonly used for linear amplification, it also exhibits nonlinear characteristics and can be used for other application fields.

The 2N4123RLRM is a single-bipolar N-channel transistor, produced by the semiconductor manufacturer ON Semiconductor. This transistor can operate at a range of 1V to 6V, making it suitable for battery operated circuits. It has a power dissipation of 600mW, making it a suitable choice for applications that require low power dissipation. Generally, transistors of this type are used in radio circuits, power supplies, switching circuits, audio amplifiers and low noise circuits. Because of its N-type structure, the 2N4123RLRM has PNP characteristics.

The working principle of the 2N4123RLRM is based on the N-type silicon junction. The input signal applied is converted into a voltage across the emitter-base junction, which activates the transistor. This voltage amplifies the current flow through the collector-emitter junction, creating a large current gain called the transistor\'s current gain, which is usually denoted as "hFE". This process creates an amplified voltage, which is used to drive electrical devices. The current that passes through the transistor can be controlled by adjusting the base voltage of the transistor.

In addition to linear amplification, the 2N4123RLRM can be used for non-linear applications such as switching, muting, and switching gain levels. This transistor can be used for a variety of general purpose applications, such as logic circuit and analog signal conditioning, as well as many audio related applications like preamplifiers, tone controls, and power amplifiers.

Overall, the 2N4123RLRM is a versatile transistor and is suitable for a wide range of applications. Its low operating voltage, low power dissipation, and PNP characteristics make it a popular choice for many applications. With its linear and nonlinear characteristics, this transistor can be used for a variety of applications, such as audio amplification and signal conditioning. The wide range of applications makes the 2N4123RLRM an ideal choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference