Allicdata Part #: | 2N4125TF-ND |
Manufacturer Part#: |
2N4125TF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 30V 0.2A TO-92 |
More Detail: | Bipolar (BJT) Transistor PNP 30V 200mA 625mW Thro... |
DataSheet: | 2N4125TF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 200mA |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 2mA, 1V |
Power - Max: | 625mW |
Frequency - Transition: | -- |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | 2N4125 |
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2N4125TF Application Field and Working Principle
Introduction
The 2N4125TF is a high-speed NPN silicon switching transistor with a hermetically sealed metal-to-metal JEDEC TO-3P package. It is designed for switching and linear applications, making it suitable for a variety of applications. It operates over a wide temperature range and can handle a wide range of voltage and current levels. This makes it an excellent choice for use in low-voltage and high-current circuits, as well as in applications where fast switching speeds are required. This article will discuss the application field and working principle of the 2N4125TF.
Application Field
The 2N4125TF is a versatile device, making it suitable for a number of applications. It can be used as a switch in linear circuits, as well as in high-current relay circuits. It can also be used in low-voltage and high-current applications, such as motor control and switching power supplies. Additionally, its fast switching speeds make it a suitable choice for use in high-speed audio and video signal processing.
Working Principle
The 2N4125TF is a bipolar junction transistor (BJT). A BJT is made of two p-type semiconductor materials, called emitter and collector. These materials are connected by a thin layer of n-type material, called the base. In a BJT, the electrons and holes in the base region interact with the electrons and holes in the emitter and collector regions. This sets up a current flow between the emitter and collector, called a base current. When a voltage is applied to the base, the base current is increased, in turn increasing the current flow between the emitter and collector. This is known as the transistor\'s amplification ability, and is the basis of the transistor\'s operation.
In addition, the 2N4125TF has a high breakdown voltage of 500V and can handle up to 10A of peak current. This makes it well-suited for high-current relay applications. It also has an extremely low ON resistance of 100mΩ, making it suitable for fast switching and linear applications.
Conclusion
The 2N4125TF is a high speed NPN silicon switching transistor with a hermetically sealed metal-to-metal JEDEC TO-3P package. It is designed for switching and linear applications, making it suitable for a variety of applications. It has a high breakdown voltage of 500V and can handle up to 10A of peak current. Additionally, its fast switching speeds make it a suitable choice for use in high-speed audio and video signal processing. The 2N4125TF is an excellent choice for use in low-voltage, high-current circuits, as well as in applications where fast switching speeds are required.
The specific data is subject to PDF, and the above content is for reference
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