Allicdata Part #: | 2N4126TA-ND |
Manufacturer Part#: |
2N4126TA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 25V 0.2A TO-92 |
More Detail: | Bipolar (BJT) Transistor PNP 25V 200mA 250MHz 625m... |
DataSheet: | 2N4126TA Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 200mA |
Voltage - Collector Emitter Breakdown (Max): | 25V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 2mA, 1V |
Power - Max: | 625mW |
Frequency - Transition: | 250MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | 2N4126 |
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The 2N4126TA is a bipolar junction transistor (BJT) of the single type. It is a kind of low voltage, low power PNP transistor. This type of transistor is often used in many different kinds of applications, such as audio equipment and linear integrated circuits (ICs).
The 2N4126TA offers a low collector-to-emitter breakdown voltage of 5 volts in addition to a low collector-emitter saturation voltage of 0.3 volts. Its collector-emitter saturation capability and a high current gain of 300 make it suitable for general-purpose operation and audio amplification applications. Its packaging includes a plastic TO-92 three-pin package with dimensions of 3 x 3.5 x 4.5mm. Furthermore, its biasing and operation temperature range allows it to operate between -55°C to +125°C.
In order to understand the workings of a transistor, it is first necessary to understand its basic components. The 2N4126TA is made of several parts. First, there are two types of diodes placed in the same package which feed some current into the transistor in order for it to operate. The two diodes are referred to as a base-emitter junction and a base-collector junction. A base-emitter junction controls the current that flows between the emitter and the collector. The second diode is a base-collector junction and this diode is responsible for the amount of current that flows between the collector and the emitter.
When current is applied to the base of the transistor, it triggers a reaction in the transistor. This reaction is known as the principle of hFE or current gain. The current gain refers to the amplification of current that occurs when the base current is increased. In the 2N4126TA, the current gain is approximately 300, although this can vary depending on the temperature of the environment or the type of transistor that is used.
The 2N4126TA is a highly versatile transistor and is suitable for many different applications. It is commonly used in Logic Gates, digital pulse circuits, timers, linear signal amplifiers, oscillators, oscilloscopes, and audio final stages among others. The 2N4126TA is also a popular choice for use in many consumer products such as electric razors, converters, and digital cameras.
The 2N4126TA transistor is a reliable, efficient and cost-effective transistor that is suitable for many different applications. Its low breakdown voltage and collector-emitter saturation make it useful for a wide range of applications. Its small size and easy to use package make it easy to handle and use, making it popular amongst many engineers and hobbyists alike.
The specific data is subject to PDF, and the above content is for reference
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