Allicdata Part #: | 2N4123TFR-ND |
Manufacturer Part#: |
2N4123TFR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 30V 0.2A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN 30V 200mA 250MHz 625m... |
DataSheet: | 2N4123TFR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 200mA |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 2mA, 1V |
Power - Max: | 625mW |
Frequency - Transition: | 250MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | 2N4123 |
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Bipolar Junction Transistor (BJT) can be categorized into two types – NPN and PNP types. Each type of transistor has its own application field. 2N4123TFR is a PNP transistor. Since the PNP transistors are manufactured to work in reverse biasing, the 2N4123TFR are widely used in any application where the reverse biasing of the transistor is required.
PNP transistors require a voltage source to be connected to the base terminal. This voltage creates an electric field in the transistor junction which restricts the flow of electrons in the N-type areas and accelerates them in the P-type area. This creates a voltage difference which acts as a barrier to control the large current of the load to which the transistor is connected.
2N4123TFR is a PNP transistor with very good electrical characteristics. It has high gain, good stability and low noise levels. It is also quite versatile and can be used in several applications. It is used in audio amplifiers, switching applications, motor control circuits and many other applications. This transistor is also used to amplify a signal or a voltage from one point to another.
2N4123TFR transistors are made of silicon, which has a high mobility of electrons due to its lattice structure. For this reason, this type of transistor is used for high frequency switching applications. These transistors have high gain, which enables them to switch faster and respond very quickly in high frequency circuits.
The working principles of 2N4123TFR are the same as other types of BJTs. When a voltage is applied to the base terminal, it creates an electric field which controls the flow of electrons in the N-type and P-type areas. This causes a voltage difference between the collector and the emitter, which acts as a barrier to control the large current of the load to which the transistor is connected. This is the basic principle of the operation of a PNP transistor.
2N4123TFR transistors are widely used in many electronic circuits due to their good performance and versatility. These transistors are used in audio amplifiers, switching applications, motor control circuits and in many other applications. They are also used to amplify a signal or a voltage from one point to another. They provide the required gain and stability for the circuit. These transistors are also very effective in high frequency circuits because of their relatively high gain and good stability.
In conclusion, 2N4123TFR transistors are a very good choice for many applications such as audio amplifiers, switching applications and motor control circuits. These transistors are made of silicon, which makes them very versatile and can be used in any application where the reverse biasing of the transistor is required. The working principle of these transistors is the same as other types of BJTs and they provide a voltage difference between the collector and the emitter which acts as a barrier to control the current of the load to which the transistor is connected. They are also very effective in high frequency circuits due to their relatively high gain and good stability.
The specific data is subject to PDF, and the above content is for reference
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