Allicdata Part #: | 2N4124BU-ND |
Manufacturer Part#: |
2N4124BU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 25V 0.2A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN 25V 200mA 300MHz 625m... |
DataSheet: | 2N4124BU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 200mA |
Voltage - Collector Emitter Breakdown (Max): | 25V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 2mA, 1V |
Power - Max: | 625mW |
Frequency - Transition: | 300MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | 2N4124 |
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The 2N4124BU is a PNP silicon planar epitaxial transistor for general-purpose amplifier and switching applications. This transistor is designed to work within a wide range of currents, from a few milliamps up to a few hundred milliamps and above.
The main features of the 2N4124BU include its low noise figure, its ability to handle high collector currents without compromising its operation, its high current gain, and its low overall cost. The transistor is designed for use in a wide range of electronic applications, including general analog signal amplification, digital signal processing, interstage coupling, switching, and pulse generation.
The 2N4124BU is a bipolar junction transistor (BJT) and is classified as a single transistor. As a BJT, the 2N4124BU has three layers, or regions, of semiconductor material: the base, the collector and the emitter. When a current is applied to the base-emitter junction, it causes a voltage drop. This voltage drop, in turn, causes current to flow in the collector-emitter circuit. This is called the forward-biased condition, and it is the primary operational mode of the transistor. The collector-emitter voltage can also be applied to the base-emitter circuit. This causes a current to flow in the opposite direction and is called the reverse-biased condition.
The basic working principle of the 2N4124BU is that when a current is applied to its base-emitter junction, it will cause a voltage drop and current to flow in the collector-emitter circuit. This allows the transistor to act as an amplifier, allowing signals to be amplified or switched. Additionally, the transistor can be used to generate pulses, which can be used to control other devices or act as a timing circuit.
The 2N4124BU has many potential application fields, such as low-power general analog signal amplification and digital logic gates. It can also be used in high-current switching applications, including relay and actuation applications, as well as in pulse generation applications, both for analog and digital electronics. Additionally, the transistor can be used to regulate or regulate current in circuits, as well as to provide isolation or buffering of signals from other components.
In conclusion, the 2N4124BU is a powerful PNP silicon planar epitaxial transistor that can be used in a wide range of applications. It is a single bipolar junction transistor (BJT) that uses a base-emitter voltage drop to generate current in the collector-emitter circuit. This current can be used to regulate or regulate current, switch, amplify signals, or generate pulses. The 2N4124BU is a cost-effective solution for low-power general analog signal amplification and digital logic gate applications, as well as high-current switching and pulse generation applications.
The specific data is subject to PDF, and the above content is for reference
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