2N4124TFR Allicdata Electronics
Allicdata Part #:

2N4124TFR-ND

Manufacturer Part#:

2N4124TFR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 25V 0.2A TO-92
More Detail: Bipolar (BJT) Transistor NPN 25V 200mA 300MHz 625m...
DataSheet: 2N4124TFR datasheet2N4124TFR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V
Power - Max: 625mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: 2N4124
Description

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Introduction of 2N4124TFR

2N4124TFR is a single bipolar junction transistor (BJT) that uses a silicon epitaxial planar resistor as its active component. It is available as an NPN type and features excellent high-speed switching performance. 2N4124TFR also exhibits high-speed breakdown characteristics and is capable of withstanding high power.

Application Field of 2N4124TFR

2N4124TFR is mainly used in the field of audio related applications and in various high speed switching circuits. It can be used in the input stages of audio amplifiers, radio receivers and other circuits requiring wide-band high-gain amplification. Also, it can be applied in electronic circuits as well as various transducers and other high-speed switching devices.

Working Principle of 2N4124TFR

2N4124TFR transistor is constructed of a P-type base material, a N-type emitter region and an N-type collector region. When a breakdown voltage is applied to the base-emitter junction of the device, current from the collector region passes through the base-emitter junction and is transferred to the emitter. This collector-emitter current will then cause a change in the potential of the collector region.The device works in such a way that when an input signal is applied to the base of the 2N4124TFR transistor, the resulting current will increase or decrease the N-type collector region. This causes a corresponding change in the voltage across the base-emitter junction, resulting in an output signal.

Conclusion

In conclusion, the 2N4124TFR is a single bipolar junction transistor that is mainly used in the field of audio related applications and in various high speed switching circuits. Its P-type base and N-type emitter and collector allows for efficient current gain and fast switching. It is capable of withstanding high power and is thus suitable for various electronic circuits, transducers and other high-speed switching devices.

The specific data is subject to PDF, and the above content is for reference

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