
Allicdata Part #: | 2N4125TAR-ND |
Manufacturer Part#: |
2N4125TAR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 30V 0.2A TO-92 |
More Detail: | Bipolar (BJT) Transistor PNP 30V 200mA 625mW Thro... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 200mA |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 2mA, 1V |
Power - Max: | 625mW |
Frequency - Transition: | -- |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | 2N4125 |
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2N4125TAR: Application Field and Working Principle
The 2N4125TAR transistor is a single, bipolar junction transistor (BJT) that is used in a wide range of applications typically involving switching and simple final electronic power amplifiers. This transistor belongs to a group of transistors known as the TO-39 family. It is designed to have a high breakdown voltage with high current gain and low saturation Voltage. It can handle a collector current of 2A and has a typical rated operating temperature of -55C to 200C.
Construction and Packaging
Initially, the 2N4125TAR transistor was manufactured using an alloy-junction process, but it is now available using a silicon-gate process. The top of the transistor is sealed with a ceramic insulating cap, which ensures that the transistor is isolated from the environment. The transistor is available in two package types: TO-39 and TO-236AB. The TO-236AB package is a hermetically sealed, molded case that provides additional protection.
Working Principle
The 2N4125TAR transistor is a three-terminal device, meaning it has three leads: the base, the collector and the emitter. When power is supplied to the base lead, it allows a certain amount of current to flow from the collector to the emitter. This current is called the collector current. This current can be adjusted by changing the potential of the base lead. The current gain of the transistor is determined by the ratio between the collector current and the base current.
The 2N4125TAR transistor also has a low saturation voltage. This means that it can supply a large amount of power, even at low levels of base current. Additionally, it has a very high breakdown voltage which makes it much more reliable than other transistors. This enables it to be used in high-powered applications that require a high degree of reliability.
Applications
The 2N4125TAR transistor is used in a wide range of applications, including switching and power amplifiers. It is commonly found in motor control circuits as it can provide high current while still having a low saturation voltage. Additionally, it is often used in RF circuits, as it can handle high power levels without breaking down. It is also used in audio amplifiers.
The 2N4125TAR transistor is also used for analog signal processing applications. It can be used to create an adjustable voltage divider circuit and is often used in modulation circuits. Additionally, it is used in timer circuits, voltage regulators and zero crossing circuits.
Conclusion
The 2N4125TAR transistor is a single, bipolar junction transistor that is used in a wide range of applications. Its high breakdown voltage and low saturation voltage make it suitable for high power applications. Additionally, it can be used in switching and power amplifiers, motor control circuits, RF circuits, audio amplifiers, analog signal processing applications and more.
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