2N4123BU Discrete Semiconductor Products

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2N4123BU is a low voltage, high frequency, silicon NPN epitaxial transistor in a two-lead SOT-89 plastic package. It is a device from the general purpose transistors series with high-temperature stability that ensures reliable operation in the most challenging climate conditions. The 2N4123BU is especially suited for applications where long-term stability and reliable operation is needed.

Thanks to 2N4123BU’s performance capabilities and wide voltage range, it can be used in a variety of applications including buffer stages, linear amplification and switching operations. Typical uses also involve audio applications such as high- and low-frequency amplifiers and cross-over networks, radio frequency circuits, broadband and IF amplifiers, low-noise amplifiers, driving transformers, low-level signal stages, mixers and oscillators. It is a device that offers excellent power efficiency and superior signal integrity.

The 2N4123BU contains two identical transistors that are well-suited for single-ended and pushpull applications. This feature makes the 2N4123BU ideally suited for use in audio applications where high-current drive and low noise levels are required. The 2N4123BU can also be used as differential amplifiers, voltage followers, and current mirrors.

The 2N4123BU has a working principle that can be described as a three-terminal active device. The three terminals are the base, collector, and emitter. When a voltage is applied to the base, it allows current to flow from collector to emitter. This causes the emitter to become more positive with respect to the base, creating a self-regulating current flow. The amount of current that can flow this way is determined by the resistance of the transistor and the amount of current flowing through the base. This current is amplified as it passes through the transistor, making it an ideal device for linear amplification.

The 2N4123BU is available in a wide range of package styles, including surface mount and through-hole devices. This variety allows for optimal use in all types of electronics applications, from low-noise circuits to power switching circuits. The 2N4123BU is also available in various grades and can be tailored to fit specific application needs.

Overall, the 2N4123BU has wide application field with its high-temperature stability, excellent performance capabilities, and optimal power efficiency. Whether in audio, radio frequency, low-noise, or power switching applications, the 2N4123BU provides reliable operation and superior signal integrity. With its three-terminal active device working principle, the 2N4123BU is perfect for both single-ended and pushpull applications. The versatile range of package types and variable grades make it an ideal choice for any electronics design.

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