2N4300 Allicdata Electronics
Allicdata Part #:

2N4300-ND

Manufacturer Part#:

2N4300

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: PNP TRANSISTOR
More Detail: Bipolar (BJT) Transistor
DataSheet: 2N4300 datasheet2N4300 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: *
Part Status: Active
Description

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2N4300 Application Field and Working Principle

The 2N4300 is a general purpose, NPN, silicon power transistor. Developed by the Harris Semiconductor Company in the early 1970s, it is a highly reliable power transistor with a wide range of applications in consumer electronics, computer systems, and the automotive industry. It is currently in use in many high-voltage power applications such as industrial motor drives, power supply circuits, and audio amplifier circuits.

The 2N4300 is classified as a single-bipolar junction transistor (BJT). It is capable of operating in either the NPN or PNP configuration and is often referred to as an “all-purpose” transistor. The device is exceptionally robust and can withstand high speed switching between both configurations.

The 2N4300 is an NPN type transistor with three terminals, namely the base (B), collector (C), and emitter (E). The gate terminal (G) is not present in this device, as it is not required for the circuit configuration. In an NPN type configuration, the current flow from the collector to the emitter is controlled by the current flow from the base to the collector.

The current gain of the device is determined by the ratio of the collector current to the base current and is noted as the current gain or hFE of the 2N4300. The current flow across the base-collector junction is limited by the base resistance, as is the current gain of the transistor. The 2N4300 has a low base resistance that enables it to reach a high current gain which is typically 120 - 160.

The power dissipation of the device is given as the power rate that it is capable of dissipating. The power rate is typically 0.625W. This means that the 2N4300 can dissipate l00mW of power continuously when operated under normal conditions.

The 2N4300 has a very high breakdown voltage rating. It typically has a breakdown voltage rating of 600V - 800V. This allows it to withstand higher levels of voltage than other transistors with less breakdown voltage ratings.

The 2N4300 has a wide range of applications in both analog and digital circuits. Its ability to withstand high voltage ratings makes it a suitable choice for use in circuits dealing with high voltages. It is widely used in industrial motor drives and power supply circuits. Its low-voltage operation and high current gain makes it ideal for use in audio amplifier circuits. Its robustness also makes it suitable for use in automotive applications such as ignition systems and ignition controls.

In summary, the 2N4300 is a highly reliable, general purpose, NPN, silicon power transistor. It is a single-bipolar junction transistor, capable of operating in either NPN or PNP configuration. The device has a high current gain, a high breakdown voltage rating, and low base resistance. These features make it a suitable choice for many applications such as industrial motor drives, power supply circuits, audio amplifier circuits, and automotive applications.

The specific data is subject to PDF, and the above content is for reference

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