Allicdata Part #: | 2N4338-E3-ND |
Manufacturer Part#: |
2N4338-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 50V 600UA TO-206AA |
More Detail: | JFET N-Channel 50V 300mW Through Hole TO-206AA (T... |
DataSheet: | 2N4338-E3 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
FET Type: | N-Channel |
Voltage - Breakdown (V(BR)GSS): | 50V |
Current - Drain (Idss) @ Vds (Vgs=0): | 200µA @ 15V |
Voltage - Cutoff (VGS off) @ Id: | 300mV @ 100nA |
Input Capacitance (Ciss) (Max) @ Vds: | 7pF @ 15V |
Power - Max: | 300mW |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-206AA, TO-18-3 Metal Can |
Supplier Device Package: | TO-206AA (TO-18) |
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The 2N4338-E3 is an N-Channel Junction Field Effect Transistor (JFET) that is often employed in analog signal processing, which is the operation of continuous real-world signals in electronic systems. It is a voltage-controlled device, meaning that an external potential is used to alter its current flow. The 2N4338-E3 is part of the 2N4xxx family of JFET transistors.
Working Principle
The 2N4338-E3 JFET works through the generation of a potential gradient at a semiconductor junction. This junction is created by taking two regions of a semiconductor material and introducing a p-n junction between them, which produces a field across the junction. The two regions of the p-n junction are known as the “source” and “drain”. The application of voltage to the source creates an electrostatic field that forces electrons in the nearby area to flow from the source to the drain. As a result, the current flow from source to drain is modulated.
Applications of the 2N4338-E3
The 2N4338-E3 has numerous applications ranging from audio amplifiers to wireless communication systems. It is primarily utilized for analog signal processing, as it offers low power consumption, low distortion, and excellent performance at high frequencies. In audio amplifier applications, the 2N4338-E3 is often used as a preamplifier and is known for its excellent low-noise properties. It is also used in RF applications, such as in high frequency receivers, microwave amplifiers and oscillators, and in wireless communications. The transistor\'s low power consumption, combined with its high speed and low noise, make it an ideal choice for these applications.
The 2N4338-E3 is also commonly used in onboard power circuits in cars and other vehicles. Its low-noise characteristics make it convenient for use in ignition systems, where a wide dynamic range is necessary. In addition, its small form factor makes it easy to install and is suitable for harsh environments.
Conclusion
The 2N4338-E3 is a versatile and reliable JFET transistor that is suitable for a variety of applications. Its low noise and low power characteristics make it ideal for audio and RF applications, and its small form factor allows it to be used in space-restricted areas. The 2N4338-E3 is also highly resistant to harsh environments, making it ideal for onboard power circuits in vehicles.
The specific data is subject to PDF, and the above content is for reference
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