2N4398 Allicdata Electronics

2N4398 Discrete Semiconductor Products

Allicdata Part #:

2N4398-ND

Manufacturer Part#:

2N4398

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: TRANS PNP 40V 30A TO-3
More Detail: Bipolar (BJT) Transistor PNP 40V 30A 4MHz 5W Throu...
DataSheet: 2N4398 datasheet2N4398 Datasheet/PDF
Quantity: 99
Stock 99Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 30A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 4V @ 6A, 30A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 2V
Power - Max: 5W
Frequency - Transition: 4MHz
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-3
Description

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The 2N4398 is a silicon NPN transistor that is commonly used in various electronic circuits. It is a small-signal transistor, used mainly for amplifying and switching applications. The 2N4398 belongs to the family of transistors called Bipolar Junction Transistors (BJT). BJTs are three terminal active devices composed of three layers of semiconductor materials, two being of the same type (called emitter and collector) and the third one (called base) being of the opposite type, in this case an NPN transistor.

The basic principle of a BJT is that the base-emitter junction of the transistor acts as a controlled current regulator. The current that flows from the emitter to the base, is in proportion to the current that flows from the collector to the base. This current control is determined mainly by the voltage drop at the base-emitter junction, which is called the forward base-emitter voltage (Vbe). This is the main principle behind the operation of the 2N4398.

The 2N4398 can be used in a variety of applications, including amplifiers, switches, modulators and other circuits which require a voltage sensitive switching action or high gain amplification. It can also be used as a constant voltage reference source in logic circuits. This is due to the fact that the 2N4398 has a low Vbe, meaning that it can be used to establish a voltage reference without any additional components.

In addition to its low Vbe, the 2N4398 has a high gain, which is why it is often used in amplifier and oscillator circuits. It has a gain of approximately 1000, meaning that a small input signal can be amplified to a great degree. Moreover, the 2N4398 has a very low leakage current, which allows it to be used in low power applications, such as circuits for remote monitoring or for timekeeping.

The 2N4398 is also often used in computer circuits, such as memory chips and analog-to-digital converters. Its high gain and low leakage current make it ideal for these applications. Furthermore, its low Vbe allows it to be used in logic circuits as a voltage reference, allowing for a more accurate communication between digital logic circuits.

In summary, the 2N4398 is an NPN transistor commonly used in various electronic circuits. It belongs to the family of Bipolar Junction Transistors (BJT). The basic principle behind its operation is that the base-emitter junction acts as a current regulator, with the current that flows from the emitter to the base being proportional to the current that flows from the collector to the base. Its application range is wide, most commonly used for amplifying and switching purposes due to its high gain and low leakage current. Additionally, the low Vbe makes it suitable for logic circuits, allowing for more precise communication between digital logic circuits.

The specific data is subject to PDF, and the above content is for reference

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