Allicdata Part #: | 2N4339-2-ND |
Manufacturer Part#: |
2N4339-2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 50V 1.5MA TO-206AA |
More Detail: | JFET N-Channel 50V 300mW Through Hole TO-206AA (T... |
DataSheet: | 2N4339-2 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
FET Type: | N-Channel |
Voltage - Breakdown (V(BR)GSS): | 50V |
Current - Drain (Idss) @ Vds (Vgs=0): | 500µA @ 15V |
Voltage - Cutoff (VGS off) @ Id: | 600mV @ 100nA |
Input Capacitance (Ciss) (Max) @ Vds: | 7pF @ 15V |
Power - Max: | 300mW |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-206AA, TO-18-3 Metal Can |
Supplier Device Package: | TO-206AA (TO-18) |
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JFETs are transistors commonly used in modern electronics. The 2N4339-2 is a special type of junction field-effect transistor, or JFET, designed to enable higher output current and lower noise levels than other types of JFETs. Here, we will discuss the applications and working principle of the 2N4339-2.
The 2N4339-2 was designed for applications that require high-speed switching, low power consumption, and good noise control. It’s commonly used in radio transceivers, computing hardware and telecom applications. The 2N4339-2 is also used in automotive, industrial and medical electronics. The main benefits of the 2N4339-2 include its excellent frequency response and low power consumption, making it an ideal choice for electronic systems that need to operate at high frequencies and low power levels.
The 2N4339-2’s working principle is fairly basic. The JFET consists of two terminals, namely the gate and the drain. The gate is the control terminal which is responsible for controlling the flow of current through the transistor. The drain is the output terminal which is responsible for supplying current to the load. The 2N4339-2 works on the principle of “gate bias”. Here, the drain current is controlled by the gate-source voltage. This voltage regulates the flow of current from the source to the drain and is responsible for controlling the output voltage.
The 2N4339-2 can be operated in either linear or saturation regions. In the linear region, the output current is directly proportional to the gate-source voltage. The output voltage can be regulated by varying the gate bias voltage. In the saturation region, the output current rises sharply as the gate-source voltage is increased. The output voltage depends on the gate bias voltage as well as the load current.
The 2N4339-2 is a versatile JFET and it is used in all types of electronic applications. It can provide exceptionally low input and output capacitance, low power consumption, and excellent noise characteristics. It can also be used to regulate and control high-frequency signals in RF circuitry, as well as providing power amplification in audio and video signals. Overall, the 2N4339-2 offers excellent performance for all sorts of modern electronics.
The specific data is subject to PDF, and the above content is for reference
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