2N4393 Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 2N4393 is a P-Channel Field-Effect Transistor (FET) with a JFET structure. It is a low-cost, low-power, high-functionality transistor that is capable of operating over a wide range of temperature and frequency ranges.

The 2N4393’s application fields lies in the areas of switching, signal processing, signal amplification, pulse generation, and motor speed control. It is often used in circuits that require signal transmission and condition amplification, such as AC signal transmission and signal modulation. Furthermore, the 2N4393 is also used in signal slicing, signal filtering, signal shaping, and timing circuits. It is commonly used to construct audio amplifiers, radio receivers, and other audio applications.

The 2N4393 applies a JFET structure, which stands for Junction Field-Effect Transistor, a type of semiconductor which is made from a p-type and an n-type semiconductor. The P-Channel FET utilizes a channel between two electrodes – the source and the drain. By changing the amount of voltage applied to the gate, the resistance of the channel between the source and drain can be altered, allowing for the control of current and providing current amplification.

The JFET structure of the 2N4393 allows for superior performance, low power requirements, and high switching speeds. The majority of the JFET’s current-handling capabilities are handled by the source-drain junction. As such, the source-drain voltage is reduced, allowing the transistor to handle higher voltages and improve its performance. Additionally, the P-Channel FET can be used in negative voltage circuits, increasing its range of applications. The working principle of the 2N4393 is fundamental to its operation. Its source and drain are connected to a P-type semiconductor, whereas its gate is connected to an N-type semiconductor. When voltage is applied to the gate, the depletion region between the source and drain expands or contracts, based on the polarity of the gate-source voltage. Thus, current will flow through the channel and be regulated by the depletion region, allowing for the control of current and providing current amplification.

The benefits of the 2N4393 P-Channel FET are many. It is low-cost and low-power, and provides superior performance, high switching speed, and wide temperature and frequency ranges. Additionally, it is easy to use with a wide range of circuit topologies, making it an ideal choice for signal transmission and condition amplification in a number of applications.

The specific data is subject to PDF, and the above content is for reference