Allicdata Part #: | 2N4391-2-ND |
Manufacturer Part#: |
2N4391-2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 40V .1NA TO-18 |
More Detail: | JFET N-Channel 40V 1.8W Through Hole TO-206AA (TO... |
DataSheet: | 2N4391-2 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
FET Type: | N-Channel |
Voltage - Breakdown (V(BR)GSS): | 40V |
Current - Drain (Idss) @ Vds (Vgs=0): | 50mA @ 20V |
Voltage - Cutoff (VGS off) @ Id: | 4V @ 1nA |
Input Capacitance (Ciss) (Max) @ Vds: | 14pF @ 20V |
Resistance - RDS(On): | 30 Ohms |
Power - Max: | 1.8W |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-206AA, TO-18-3 Metal Can |
Supplier Device Package: | TO-206AA (TO-18) |
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JFETs, or junction gate field effect transistors, are three-terminal semiconductor devices used for amplification, switching, and voltage regulation. They are used in a variety of applications including audio amplifiers, light detectors, radio transmitters and receivers, oscillators, and frequency synthesizers. However, because of their low-current and low-frequency characteristics, JFETs are not well suited for high-power applications such as motor control. The 2N4391-2 is an example of a JFET designed for relatively low current applications.
The 2N4391-2 is a N-channel junction gate field effect transistor (JFET) with a maximum drain current (ID) of 200mA, a maximum voltage rating of 40V, and a gate-source voltage (VGS) rating of ±20V. It is classified as a low-power device suitable for use in most general purpose applications.
The 2N4391-2 is designed to operate in the depletion mode, in which the source-drain current increases with increasing source-gate voltage. This makes the device ideal for low-current applications such as audio amplifiers and light detectors. When operated in the depletion mode, the device can switch from a “high” state (ID > 1mA) to a “low” state (ID < 0.2mA) with a gate source voltage of 0V. This makes it well suited for use as a switch or relay.
The 2N4391-2 operates on the principle of a vacuum-depleted gate (the gate being surrounded by air in a vacuum) providing a high impedance. This allows more control over the source-drain current and therefore more control over the device’s operation. The vacuum-depleted gate is also said to increase the breakdown voltage of the device, allowing it to tolerate higher voltages in a more reliable way.
As a three-terminal device, the 2N4391-2 can be used in a wide range of applications requiring amplification, switching, and voltage regulation. It can be used in audio amplifiers to provide high input impedance and high gain, or in low-power switching applications such as relays and timers. Additionally, because of its low-current and low-frequency characteristics, the 2N4391-2 is ideal for use as a voltage regulator where low output current operation is desired.
In conclusion, the 2N4391-2 JFET is a low-power three-terminal device designed for relatively low current applications, and is ideal for use in audio amplifiers, light detectors, switching and voltage regulation applications. It operates on the principle of a vacuum-depleted gate providing a high impedance, which allows more control over the source-drain current and an increase in the device’s breakdown voltage.
The specific data is subject to PDF, and the above content is for reference
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