2N4391-2 Allicdata Electronics
Allicdata Part #:

2N4391-2-ND

Manufacturer Part#:

2N4391-2

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 40V .1NA TO-18
More Detail: JFET N-Channel 40V 1.8W Through Hole TO-206AA (TO...
DataSheet: 2N4391-2 datasheet2N4391-2 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40V
Current - Drain (Idss) @ Vds (Vgs=0): 50mA @ 20V
Voltage - Cutoff (VGS off) @ Id: 4V @ 1nA
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Resistance - RDS(On): 30 Ohms
Power - Max: 1.8W
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-206AA (TO-18)
Description

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JFETs, or junction gate field effect transistors, are three-terminal semiconductor devices used for amplification, switching, and voltage regulation. They are used in a variety of applications including audio amplifiers, light detectors, radio transmitters and receivers, oscillators, and frequency synthesizers. However, because of their low-current and low-frequency characteristics, JFETs are not well suited for high-power applications such as motor control. The 2N4391-2 is an example of a JFET designed for relatively low current applications.

The 2N4391-2 is a N-channel junction gate field effect transistor (JFET) with a maximum drain current (ID) of 200mA, a maximum voltage rating of 40V, and a gate-source voltage (VGS) rating of ±20V. It is classified as a low-power device suitable for use in most general purpose applications.

The 2N4391-2 is designed to operate in the depletion mode, in which the source-drain current increases with increasing source-gate voltage. This makes the device ideal for low-current applications such as audio amplifiers and light detectors. When operated in the depletion mode, the device can switch from a “high” state (ID > 1mA) to a “low” state (ID < 0.2mA) with a gate source voltage of 0V. This makes it well suited for use as a switch or relay.

The 2N4391-2 operates on the principle of a vacuum-depleted gate (the gate being surrounded by air in a vacuum) providing a high impedance. This allows more control over the source-drain current and therefore more control over the device’s operation. The vacuum-depleted gate is also said to increase the breakdown voltage of the device, allowing it to tolerate higher voltages in a more reliable way.

As a three-terminal device, the 2N4391-2 can be used in a wide range of applications requiring amplification, switching, and voltage regulation. It can be used in audio amplifiers to provide high input impedance and high gain, or in low-power switching applications such as relays and timers. Additionally, because of its low-current and low-frequency characteristics, the 2N4391-2 is ideal for use as a voltage regulator where low output current operation is desired.

In conclusion, the 2N4391-2 JFET is a low-power three-terminal device designed for relatively low current applications, and is ideal for use in audio amplifiers, light detectors, switching and voltage regulation applications. It operates on the principle of a vacuum-depleted gate providing a high impedance, which allows more control over the source-drain current and an increase in the device’s breakdown voltage.

The specific data is subject to PDF, and the above content is for reference

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