Allicdata Part #: | 2N4393-E3-ND |
Manufacturer Part#: |
2N4393-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 40V .1NA TO-18 |
More Detail: | JFET N-Channel 40V 1.8W Through Hole TO-206AA (TO... |
DataSheet: | 2N4393-E3 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
FET Type: | N-Channel |
Voltage - Breakdown (V(BR)GSS): | 40V |
Current - Drain (Idss) @ Vds (Vgs=0): | 5mA @ 20V |
Voltage - Cutoff (VGS off) @ Id: | 500mV @ 1nA |
Input Capacitance (Ciss) (Max) @ Vds: | 14pF @ 20V |
Resistance - RDS(On): | 100 Ohms |
Power - Max: | 1.8W |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-206AA, TO-18-3 Metal Can |
Supplier Device Package: | TO-206AA (TO-18) |
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2N4393-E3 field-effect transistor (FET) is a type of transistor used for amplifying or switching electronic signals. It has a two-terminal input, a gate, and two-terminal output, a drain and a source. It can be used to amplify audio signals or digital signals, or to switch a digital line state.
2N4393-E3 Application Field and Working Principle
The 2N4393-E3 is a JFET type of transistor and is composed of an n-channel of semiconductor material between source and drain regions. It is a field-effect transistor, meaning that the electrical properties of its channel can be modified with an applied voltage. It can be used in applications such as analog or digital circuits, amplifiers, internal switches and others.
The working principle of the 2N4393-E3 is based on the variation of the resistance of the channel between its source and drain, when a voltage is applied to the gate. The current flowing through the channel is determined by the amount of voltage applied to the gate, therefore, controlling the current between the source and drain. This property gives the 2N4393-E3 the ability to amplify or switch electronic signals.
The 2N4393-E3 is used for a variety of applications. It can be used in active filters, high resolution circuits, digital circuits, and high-speed switching circuits. It is used for variable gain amplifiers, RF and IF amplifiers, phase-locked loops, analog-to-digital converters, high power converters, and other applications.
The 2N4393-E3 is also used as an input stage in analogue and digital circuits such as power amplifiers, audio circuits, and logic circuits. It is also used in high performance audio amplifiers, industrial equipment, and some medical equipment.
One application where the 2N4393-E3 is extensively used is variable gain amplifiers. It is used in variable gain amplifiers because of its ability to precisely and continuously control the gain of an amplifier. The 2N4393-E3 also has a low noise level, making it suitable for precise control and amplifying small signals.
The 2N4393-E3 is also used as an internal switch in digital circuits. An internal switch is used to control the flow of current or voltage. The gate voltage controls the resistance between source and drain and changes the on/off state of the FET. The advantage of using the 2N4393-E3 as an internal switch is that it can switch high voltages and carry high currents.
The 2N4393-E3 can also be used as a power switch. It is used in power switches to control the supply of electricity and to prevent overloading. It can also be used to increase efficiency and reduce power consumption.
Overall, the 2N4393-E3 is a versatile type of transistor which finds uses in many applications. It is used for analog and digital circuits, amplifiers, switches, and other applications. Its versatility makes it the ideal choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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