Allicdata Part #: | 2N4338-2-ND |
Manufacturer Part#: |
2N4338-2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 50V 600UA TO-206AA |
More Detail: | JFET N-Channel 50V 300mW Through Hole TO-206AA (T... |
DataSheet: | 2N4338-2 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
FET Type: | N-Channel |
Voltage - Breakdown (V(BR)GSS): | 50V |
Current - Drain (Idss) @ Vds (Vgs=0): | 200µA @ 15V |
Voltage - Cutoff (VGS off) @ Id: | 300mV @ 100nA |
Input Capacitance (Ciss) (Max) @ Vds: | 7pF @ 15V |
Power - Max: | 300mW |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-206AA, TO-18-3 Metal Can |
Supplier Device Package: | TO-206AA (TO-18) |
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A 2N4338-2 is a n-channel junction field-effect transistor (JFET). It has a low gate-source threshold voltage and is designed to be used in digital logic in high-speed applications. The device is constructed of a semiconductor substrate with an insulating layer between the gate and source, allowing for a much narrower width between the terminals. It is also used to reduce power consumption and improve the signal-to-noise ratio in digital applications for digital, analog and power application.
In terms of working principle, 2N4338-2 JFETs use a negative feedback in the gate to control current, allowing them to be more sensitive than their bipolar counterparts. The gate acts as an insulated element between the source and drain and works as an electrostatic shield to block the reverse current flow. The current flowing through the JFET is controlled by the input voltage applied to the gate terminal of the JFET, producing a drain current that is proportional to the input. The drain current is also proportional to the charge applied to the gate but in opposite direction. It is also important to note that the drain voltage is not controlled directly by the gate voltage.
2N4338-2 JFETs offer higher input impedance than a bipolar transistor, meaning it will draw less current and provide better signal-to-noise ratio. This makes them an ideal choice for high-performance analog and digital applications, such as amplifier applications, digital signal processing and audio circuits. They are also useful for switching applications, as well as for amplifying and controlling signals in a wide range of applications. In terms of power applications, JFETs can be used in power conversion and rectifying circuits.
In terms of application field, 2N4338-2 JFETs are commonly used for high-speed logic and mixed signal applications, audio and video amplifiers, switch mode power converters, power switching and rectifying applications, as well as in oscillators and frequency multipliers.
In conclusion, 2N4338-2 JFETs are a popular choice for use in digital applications due to their high input impedance, low gate-source threshold voltage and wide operating voltage range. Their use also ensures power consumption is reduced and the signal-to-noise ratio is improved. They are generally used in logic and mixed-signal applications, audio and video amplifiers, power converters, switching and rectifying applications and frequency multipliers.
The specific data is subject to PDF, and the above content is for reference
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