Allicdata Part #: | 2N4391UB-ND |
Manufacturer Part#: |
2N4391UB |
Price: | $ 21.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | N CHANNEL JFET |
More Detail: | JFET |
DataSheet: | 2N4391UB Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 19.18530 |
Series: | * |
Part Status: | Active |
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The 2N4391UB is a JFET (Junction Field Effect Transistor), designed and manufactured by ON Semiconductor. It has an N-Channel enhancement mode, which means it is normally off when there is no gate current, allowing it to be easily switched on or off. It is commonly used in analog circuits for amplifiers, switches and voltage sources.
The JFET 2N4391UB is a feature-rich device. It has a low noise, low current leakage, good linearity and high-temperature performance. It also has an extended temperature range and has a wide range of package options to choose from. In addition, it has an extremely low leakage current of 0.1nA. This makes it ideal for battery-powered applications and low power applications where minimizing power consumption is essential. It is well suited for use in audio and RF circuitry and can also be used in high impedance circuits and precision electronics.
The 2N4391UB has three pins: the drain, gate, and source. When the gate voltage is below the threshold voltage (set by the drain current), current will flow from the drain to the source. This biasing can be achieved by applying a negative voltage on the gate. The amount of current flowing through the drain is dependent on the gate voltage as well as the drain to source voltage. The 2N4391UB can be used for applications such as voltage followers, sample and hold circuits, RF and audio amplifiers, and signal isolators.
The 2N4391UB works on the principle of the electric field between the contacts of the PN junction and the source and drain. The electric field is created between the source and drain when a negative voltage is applied to the gate. The field forces electrons to travel through the channel between the source and drain contacts, creating a current. The amount of current that can be carried changes with the voltage applied to the gate, thus controlling the voltage and current gain.
The 2N4391UB is a versatile, cost-effective solution for many analog applications and provides excellent performance in extreme temperatures and tight power budgets. Its benefits include a low voltage operation, high-temperature performance, extended temperature range, and low power consumption, making it perfect for battery-operated equipment and circuits where minimized power consumption is essential. The 2N4391UB is also available in a variety of packages, allowing it to be used for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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2N4391UB | Microsemi Co... | 21.11 $ | 1000 | N CHANNEL JFETJFET |
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2N4393UB | Microsemi Co... | 21.11 $ | 1000 | N CHANNEL JFETJFET |
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2N4391-2 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 40V .1NA TO-1... |
2N4391-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 40V .1NA TO-1... |
2N4392-2 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 40V .1NA TO-1... |
2N4392-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 40V .1NA TO-1... |
2N4393-2 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 40V .1NA TO-1... |
2N4393-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 40V .1NA TO-1... |
CP206-2N4393-CT | Central Semi... | 0.0 $ | 1000 | JFET N-CH SW/CHOPPER CHIP... |
2N4338 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 50V 600UA TO-... |
2N4338-2 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 50V 600UA TO-... |
2N4338-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 50V 600UA TO-... |
2N4339 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 50V 1.5MA TO-... |
2N4339-2 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 50V 1.5MA TO-... |
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