2N5109 Allicdata Electronics

2N5109 Discrete Semiconductor Products

Allicdata Part #:

2N5109CS-ND

Manufacturer Part#:

2N5109

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: TRANS RF NPN 20V 400MA TO-39
More Detail: RF Transistor NPN 20V 400mA 1.2GHz 1W Through Hole...
DataSheet: 2N5109 datasheet2N5109 Datasheet/PDF
Quantity: 4866
Stock 4866Can Ship Immediately
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 1.2GHz
Noise Figure (dB Typ @ f): 3dB @ 200MHz
Gain: --
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39
Description

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The 2N5109 is a small-signal NPN Bipolar Transistor (BJT) that is widely used in radio frequency (RF) applications. It is an inexpensive and widely-available part, and is commonly used for amplifiers, oscillators, and other types of switch applications, such as RF switches and RF relays. This section will discuss the 2N5109\'s application field, as well as its working principle.

Applications

The 2N5109 is primarily used as an RF amplifier because it has a high gain-bandwidth and a low noise figure. It is used in a wide range of RF amplifiers, such as wideband, low-noise, and RF-IF amplifiers. In addition, it can be used in oscillators, frequency multipliers, AGC circuits, and other types of switch applications. It can also be used as a buffer amplifier in medium and low frequency applications, such as audio frequency amplifiers.

The 2N5109 is particularly suited for use in portable electronics, since it is small and lightweight, and consumes very low power. It is also well suited for use in RF applications as it has a low noise figure, which enables it to amplify noise-free signals. Furthermore, its low capacitance allows it to reduce crosstalk in RF applications.

Working Principle

The 2N5109 is a NPN transistor, which means that it is composed of three layers of semiconductor material. It has an emitter, a base, and a collector. The base acts as a control electrode, and is used to control the current flow. The emitter and the collector are the two current-carrying electrodes. When a voltage is applied to the base-emitter junction, electrons from the emitter are drawn to the base, creating a layer of carriers in the base region. The resulting current flow is amplified by the transistor\'s gain, and the amplified current is collected by the collector.

In RF applications, the 2N5109 can be used as an amplifier or a switch. When used as an amplifier, the transistor amplifies the input voltage, Vin, to produce an amplified output voltage, Vout, which is determined by the transistor\'s gain. When used as a switch, the transistor is either turned on (saturated) or off (cut-off) by controlling the current flowing through the base.

The 2N5109 is a versatile transistor that is well suited for use in a variety of RF applications. It is inexpensive, easy to find, and has excellent performance characteristics. Moreover, it is small and lightweight, making it well suited for portable electronics. It is also low power, making it well suited for low-power applications. With its wide range of uses and excellent performance, the 2N5109 is quickly becoming one of the most popular transistors on the market.

The specific data is subject to PDF, and the above content is for reference

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