Allicdata Part #: | 2N5195SLH-ND |
Manufacturer Part#: |
2N5195 SL H |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Central Semiconductor Corp |
Short Description: | TRANS PNP 80V 4A TO126 |
More Detail: | Bipolar (BJT) Transistor PNP 80V 4A 2MHz 40W Throu... |
DataSheet: | 2N5195 SL H Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Preliminary |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 4A |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 1.4V @ 1A, 4A |
Current - Collector Cutoff (Max): | 1mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 1.5A, 2V |
Power - Max: | 40W |
Frequency - Transition: | 2MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-225AA, TO-126-3 |
Supplier Device Package: | TO-126 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
.The 2N5195 SL H is a silicon NPN epitaxial planar transistor used for switching and small signal amplifying applications. It has an excellent gain transconductance and high cut-off frequency, making it suitable for many applications requiring high speed switching power. The 2N5195 SL H transistors belong to the Bipolar Junction Transistor (BJT) family and are referred to as single transistors.
Structure
All BJT transistors have three terminals and are made up of two semiconductor layers. The lower layer is the base, consisting of a thin P-type semiconductor with a small N-type area in the center. The upper layer is known as the emitter and it consists of a wide N–type region with a small P–type area in the center. The third terminal is the collector, which is above the emitter and consists of a large P-type region. This arrangement of the semiconductor layers forms a junction between the base and emitter, and the base and collector.
Working Principle
The 2N5195 SL H has two working points: its active and saturation regions. To understand the working principle of transistors, especially the 2N5195 SL H, it is important to have at least a basic understanding of the physics behind this component. It all starts with something called a majority and minority carrier. In P–type semiconductor materials, majority carriers are the positively charged holes and minority carriers are the electrons.
The base terminal of the 2N5195 SL H requires holes (positively charged majority carriers) from the collector terminal, and electrons (negative minority carriers) from the emitter terminal, in order for it to function properly. These carriers combine at the junction, creating a potential barrier.
The potential barrier created by the combination of electrons and holes allows current flow from the collector to the emitter terminals. The amount of current flowing from the collector to the emitter is determined by the amount of voltage applied to the base terminal, providing an efficient and reliable source of current.
Application Field
The 2N5195 SL H is ideal for applications that require high power switching and current gain without the need for high input impedance. It is most commonly used in applications such as voltage regulators, audio amplifiers, TV and radio. The 2N5195 SL H transistors are also well suited for high frequency use such as in switch mode power supply circuits, motor control systems, and automotive and industrial control systems.
The 2N5195 SL H is often found in electronic designs due to its fast switching characteristics and high current gain. It can operate at high frequencies, allowing it to be used in applications with high input impedance. As such, it is often used in digital circuits, as it can handle high voltage and current spikes, as well as in audio circuits for its exceptional audio fidelity.
Conclusion
The 2N5195 SL H transistor is an excellent choice for high-power switching and current gain applications, as it is capable of operating at high frequencies. It belongs to the Bipolar Junction Transistor (BJT) family, making it a single transistor. The 2N5195 SL H is capable of providing highly reliable performance, and is used in a wide range of applications including voltage regulators, audio amplifiers, motor control systems, and automotive and industrial control systems.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
2N5195 | STMicroelect... | -- | 1000 | TRANS PNP 80V 4A SOT-32Bi... |
2N5192 SL H | Central Semi... | 0.0 $ | 1000 | TRANS NPN 80V 4A TO126Bip... |
2N5195 SL H | Central Semi... | 0.0 $ | 1000 | TRANS PNP 80V 4A TO126Bip... |
2N5192R | Central Semi... | 0.0 $ | 1000 | TRANS NPN 80V 4A TO126Bip... |
2N5193 | Central Semi... | 0.0 $ | 1000 | TRANS PNP 40V 4A TO126Bip... |
2N5194 | Central Semi... | 0.0 $ | 1000 | TRANS PNP 60V 4A TO126Bip... |
2N5134 | Central Semi... | -- | 1000 | TRANSISTOR NPN TO-106Bipo... |
2N5139 | Central Semi... | 0.0 $ | 1000 | TRANSISTOR NPN TO-106Bipo... |
2N5143 | Central Semi... | 0.0 $ | 1000 | TRANSISTOR NPN TO-106Bipo... |
2N5116 | Central Semi... | -- | 1667 | JFET P-CH 30V 0.5W TO18JF... |
2N5190 | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN 40V 4A TO-225AA... |
2N5172_D26Z | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN 25V 0.5A TO-92B... |
2N5194G | ON Semicondu... | -- | 1000 | TRANS PNP 60V 4A TO225AAB... |
2N5172_D27Z | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN 25V 0.5A TO-92B... |
2N5172_D74Z | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN 25V 0.5A TO-92B... |
2N5192 | STMicroelect... | -- | 822 | TRANS NPN 80V 4A SOT-32Bi... |
2N5191 | STMicroelect... | -- | 2906 | TRANS NPN 60V 4A SOT-32Bi... |
2N5114 | Microsemi Co... | -- | 1000 | P CHANNEL JFETJFET P-Chan... |
2N5115 | Microsemi Co... | -- | 1000 | P CHANNEL JFETJFET P-Chan... |
2N5115UB | Microsemi Co... | 35.78 $ | 1000 | P CHANNEL JFETJFET P-Chan... |
2N5116JTX02 | Vishay Silic... | 54.35 $ | 1000 | JFET P-CH 30V TO-18JFET ... |
2N5116JTXL02 | Vishay Silic... | 59.3 $ | 1000 | JFET P-CH 30V TO-18JFET ... |
2N5116JTVL02 | Vishay Silic... | 78.9 $ | 1000 | JFET P-CH 30V TO-18JFET ... |
2N5114-E3 | Vishay Silic... | 0.0 $ | 1000 | JFET P-CH 30V TO-206AAJFE... |
2N5114JAN02 | Vishay Silic... | 0.0 $ | 1000 | JFET P-CH 30V TO-206AAJFE... |
2N5114JTVL02 | Vishay Silic... | 0.0 $ | 1000 | JFET P-CH 30V TO-206AAJFE... |
2N5114JTX02 | Vishay Silic... | 0.0 $ | 1000 | JFET P-CH 30V TO-206AAJFE... |
2N5114JTXL02 | Vishay Silic... | 0.0 $ | 1000 | JFET P-CH 30V TO-206AAJFE... |
2N5114JTXV02 | Vishay Silic... | 0.0 $ | 1000 | JFET P-CH 30V TO-206AAJFE... |
2N5115-E3 | Vishay Silic... | 0.0 $ | 1000 | JFET P-CH 30V TO-18JFET ... |
2N5115JAN02 | Vishay Silic... | 0.0 $ | 1000 | JFET P-CH 30V TO-18JFET ... |
2N5115JTVL02 | Vishay Silic... | 0.0 $ | 1000 | JFET P-CH 30V TO-18JFET ... |
2N5115JTX02 | Vishay Silic... | 0.0 $ | 1000 | JFET P-CH 30V TO-18JFET ... |
2N5115JTXL02 | Vishay Silic... | 0.0 $ | 1000 | JFET P-CH 30V TO-18JFET ... |
2N5115JTXV02 | Vishay Silic... | 0.0 $ | 1000 | JFET P-CH 30V TO-18JFET ... |
2N5116-E3 | Vishay Silic... | -- | 1000 | JFET P-CH 30V TO-18JFET ... |
2N5116JAN02 | Vishay Silic... | 0.0 $ | 1000 | JFET P-CH 30V TO-18JFET ... |
2N5116JTXV02 | Vishay Silic... | 0.0 $ | 1000 | JFET P-CH 30V TO-18JFET ... |
2N5114UB | Microsemi Co... | 0.0 $ | 1000 | P CHANNEL JFETJFET P-Chan... |
2N5116UB | Microsemi Co... | 0.0 $ | 1000 | P CHANNEL JFETJFET P-Chan... |
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
TRANS PNP DARL 30A 120V DIEBipolar (BJT)...
TRANS PNP DARLINGTON DIEBipolar (BJT) Tr...
TRANS GENERAL PURPOSE TO-218Bipolar (BJT...
TRANS PNP 140V 1ABipolar (BJT) Transisto...
TRANS NPN 700V 3A I2PAKBipolar (BJT) Tra...