Allicdata Part #: | 2N5115JTX02-ND |
Manufacturer Part#: |
2N5115JTX02 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | JFET P-CH 30V TO-18 |
More Detail: | JFET Through Hole TO-206AA (TO-18) |
DataSheet: | 2N5115JTX02 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Operating Temperature: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-206AA, TO-18-3 Metal Can |
Supplier Device Package: | TO-206AA (TO-18) |
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The 2N5115JTX02 is a Junction Field Effect Transistor (JFET) that is made to provide superior performance in various application fields. It is a low gate input capacitance transistor that is designed using an innovative field effect technology. This device has an exceptionally low gate capacitance of 25-pF, a maximum gate current of 25 μA, and extremely low drain to gate capacitance ratio. Due to its superior characteristics, it is popularly used in high frequency, low noise, and low power electronic circuits.
The 2N5115JTX02 is composed of an N-channel JFET with a gate, source, and drain. It is designed to streamline amplification of signals, reduce noise, and enable a wide range of circuit operations when used in electronics. Generally speaking, this device has a low noise compatible with high performance and a high current level. Additionally, its maximum operating voltage, at 100-volts, allows it to be used in numerous high voltage applications.
It has a current gain of 1.2, with a maximum drain current rating of 15A. It has a minimum transconductance of 22mS and provides an adequate level of sensitivity and stability when used. The 2N5115JTX02 also has a maximum power dissipation rating of 90W and an operating temperature range of -55°C to 150°C. This JFET is used in numerous application fields such as low noise amplifiers (LNA), switch mode power supplies (SMPS), and instrumentation amplifiers.
The working principle of the 2N5115JTX02 is relatively simple. Basically, when voltage is applied to the gate terminal, holes are induced in the N-type material and a current is drawn from the gate towards the source. This created current builds up a depletion region between the source and drain, reducing the resistance between them. This resistance is regulated by the voltages applied to the gate terminal, allowing varying currents to flow through the device.
The 2N5115JTX02 is considered to be an energy efficient transistor, as it can be operated with very low gate currents and drain-to-source voltages, resulting in low power consumption. Additionally, it is a low cost solution for some applications, and offers superior performance in comparison to other transistors in the same class. Due to its reliable performance and energy efficient characteristics, this JFET is widely used in various application fields such as automotive, consumer electronics, medical, and telecommunications.
The specific data is subject to PDF, and the above content is for reference
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