Allicdata Part #: | 2N5195GOS-ND |
Manufacturer Part#: |
2N5195G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 80V 4A TO225AA |
More Detail: | Bipolar (BJT) Transistor PNP 80V 4A 2MHz 40W Throu... |
DataSheet: | 2N5195G Datasheet/PDF |
Quantity: | 697 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 4A |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 1.4V @ 1A, 4A |
Current - Collector Cutoff (Max): | 1mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 1.5A, 2V |
Power - Max: | 40W |
Frequency - Transition: | 2MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-225AA, TO-126-3 |
Supplier Device Package: | TO-225AA |
Base Part Number: | 2N5195 |
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The 2N5195G is a Silicon PNP Bipolar Junction Transistor (BJT) designed primarily for general purpose switching and amplifier applications. It is known to be one of the most popular transistors in its category, used widely in the fields of industrial, medical, and scientific equipment, as well as being widely used in radio, audio and other electronic equipment.
The 2N5195G is well suited for high speed switching applications as it has a very low ON resistance (Rds ON). It also has excellent thermal characteristics for higher wattage applications, achieved through its 2 watt power handling capability. The 2N5195G is also quite common for amplifier applications due to its good gain-bandwidth product, and its low noise characteristics.
The 2N5195G is a PNP (Positive-Negative-Positive) transistor and works by biasing the base-emitter junction with a small current. This causes a larger current to flow through the collector-emitter junction, allowing the transistor to amplify a signal. The 2N5195G transistor operates as a switch when used as an amplifier – when the base is biased above the transistor’s turn-on voltage (VBE), it passes current from the collector to the emitter. When the base voltage is lower than the turn-on voltage (VBE), the transistor is turned off and no current can flow through the collector-emitter. This allows it to be used to switch on and off electrical components.
The 2N5195G is constructed with a variety of materials, including silicon and germanium, for a specific purpose, and is encapsulated in an epoxy encapsulated package for better insulating and heat dissipation purposes. It comes in a variety of lead and pin configurations, depending on its particular application. For example, it may be used in through-hole, surface mount or even infra-red applications.
The 2N5195G is a versatile device, and its application range is quite extensive. It is commonly used for switching and amplifier applications in both industrial and consumer electronics. It can be used to switch power circuits, motor circuits and even light bulbs. It is also used as an amplifier, allowing signals to be amplified to create a louder sound, or to filter out noise. The 2N5195G is also used to provide logic gates, which allows logic operations to be performed with ease.
In summary, the 2N5195G is an extensively used transistor, known for its low Rds ON and excellent thermal characteristics – making it ideal for high speed switching operations and ampilifer applications. Its wide range of applications, lead and pin configurations and its epoxy encapsulated package make it one of the most versatile transistors available.
The specific data is subject to PDF, and the above content is for reference
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