2N5115-E3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 2N5115-E3 is a silicon Junction Field-Effect Transistor (JFET) designed for high voltage switching and amplifier applications. It is a three-terminal device, with a gate and two other terminals (known as the drain and source). The device is also available as a surface-mount package.

The 2N5115-E3 is a depletion type JFET and is constructed from a single crystal of N-type silicon. It has a built-in positive temperature coefficient which guarantees temperature stability of the switching characteristics. The device has a low on-resistance and the gate voltage can be controlled within the desired voltage range. It is an ideal choice for high voltage switching applications such as motor control and high-voltage amplifiers.

The operating principle of the 2N5115-E3 is similar to the standard JFET. The transistor has a reverse-biased gate-drain junction, with a strong electric field created across it by the gate voltage. This electric field cancels the effects of impurities in the semiconductor material, and hence only a small current can flow across the junction. When a positive voltage is applied to the gate, the electric field between the drain and gate decreases and some of the electron carriers are released from the gate-drain junction. This increases the current between the drain and source. This current is known as the drain current.

The operating voltage of the 2N5115-E3 is specified as -55 volts to -55 volts. This is the voltage required to activate the device in its intended application. The maximum power dissipation of the device is 3 watts, and its collector current is 3 milliamps.

In terms of applications, the 2N5115-E3 is ideal for high voltage switching and amplifier circuits. It can be used in applications where a large current capacity is required, such as motor control and voltage switching. It can also be used in audio applications, such as a voltage controlled amplifier. The device can also be used in pulse width modulation and control circuits.

The 2N5115-E3 is a versatile and reliable JFET that performs well for high voltage switching and amplifier applications. It has a low on-resistance and can be controlled with a wide range of gate voltages. Its positive temperature coefficient also guarantees temperature stability, making it an ideal choice for applications requiring reliable performance over temperature variations. The device has been designed for use in circuits requiring high voltage switching and amplifier circuits, and can also be used for pulse width modulation and control circuits.

The specific data is subject to PDF, and the above content is for reference