Allicdata Part #: | 2N5116JTXL02-ND |
Manufacturer Part#: |
2N5116JTXL02 |
Price: | $ 59.30 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | JFET P-CH 30V TO-18 |
More Detail: | JFET Through Hole TO-206AA (TO-18) |
DataSheet: | 2N5116JTXL02 Datasheet/PDF |
Quantity: | 1000 |
20 +: | $ 53.90280 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
FET Type: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Operating Temperature: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-206AA, TO-18-3 Metal Can |
Supplier Device Package: | TO-206AA (TO-18) |
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The 2N5116JTXL02 is a JFET transistor that is a n-channel, depletion type device. It is a small signal device designed for linear applications, and is especially well suited for audio amplification and signal conditioning. This article will discuss the application fields and working principle of the 2N5116JTXL02 JFET.
The 2N5116JTXL02 is a general-purpose, high-performance JFET that has both high voltage capability and low gate leakage current. It has a high transconductance for excellent linearity. It has a breakdown voltage of 33V, which makes it suitable for audio applications, and its high speed response time makes it ideal for signal conditioning. The device has excellent RFI and EMI performance, with a low noise figure and low capacitance.
The 2N5116JTXL02 has several applications, such as audio frequency processing and signal conditioning, as well as other linear and analog applications. It can be used for amplifying weak signals, providing pre-amp amplification before being further amplified by a power amplifier, or for buffering between two stages in low-power analog designs. It is also used for voltage clamping and circuit protection, in both AC and DC coupled applications. It can also be used for single-ended and AGC applications.
The working principle of the 2N5116JTXL02 is based on the field effect transistor (FET) technology. The FET is made up of a source, drain and gate electrode that can be configured as either a n-type or p-type device. When the gate electrode is made positive, electrons are attracted to the gate, which causes depletion of channel between the source and the drain. This channel is the main current conduction path. By controlling the applied voltage on the gate, the current flowing through the channel can be controlled, which is the basis of the JFET operation.
The 2N5116JTXL02 is a particularly useful device for audio frequency applications, providing excellent linearity and low noise performance. It can be used for amplifying weak signals, providing pre-amp amplification before being further amplified by a power amplifier, or for buffering between two stages in low-power analog designs. It is also used for voltage clamping and circuit protection, in both AC and DC coupled applications.
In summary, the 2N5116JTXL02 is a high-performance, general-purpose JFET that has both high voltage capability and low gate leakage current. It has a breakdown voltage of 33V and a high transconductance for excellent linearity, making it especially suitable for audio applications. It has excellent RFI and EMI performance, with a low noise figure and low capacitance. It can be used in audio frequency processing and signal conditioning, as well as other linear and analog applications, and is especially well suited for audio amplification and signal conditioning.
The specific data is subject to PDF, and the above content is for reference
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