Allicdata Part #: | 2N5401_D28Z-ND |
Manufacturer Part#: |
2N5401_D28Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 150V 0.6A TO-92 |
More Detail: | Bipolar (BJT) Transistor PNP 150V 600mA 400MHz 625... |
DataSheet: | 2N5401_D28Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 600mA |
Voltage - Collector Emitter Breakdown (Max): | 150V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 10mA, 5V |
Power - Max: | 625mW |
Frequency - Transition: | 400MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | 2N5401 |
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2N5401_D28Z Transistor is a single bipolar junction transistor (BJT) device manufactured by Diodes Incorporated. It is an NPN-type, through-hole transistor specifically developed for consumer and professional audio, automotive and other power management applications.
2N5401_D28Z Transistor is typically used as a switch and current amplifier in various consumer and automotive audio applications, such as audio power amplifiers, headphone amplifiers and other consumer/audio digital and mixed-signal applications. The transistor is also suitable for use in other power management applications such as motor control, lighting and HVAC, as well as RF and analog circuits.
The operational or working principle of 2N5401_D28Z Transistor is that when voltage is applied, electrons flow from the emitter to the base which in turn will create a barrier between the base and collector, opening the switch and allowing current to flow from the collector to the emitter. This is known as forward biasing of the transistor. If a reverse voltage is applied to the base and the collector, the electrons will be repelled and the switch will be closed, preventing current from flowing from the collector to the emitter. This is known as reverse biasing of the transistor.
2N5401_D28Z Transistor features a breakdown voltage ranging between 200-500 mV for the base-emitter junction, a collector-emitter breakdown voltage of 800V and collector-base breakdown voltage of 1000V. It also offers a maximum current rating of 0.3 Amp and power dissipation of 200mW. Additional features include an excellent thermal resistance of 100°C/W, an active region temperature of +150°C and a storage temperature range of -55°C to +150°C.
2N5401_D28Z Transistor is a high-quality device with efficient performance and is provided in an economic package. It has an excellent temperature range and is an energy efficient device offering a combination of low power consumption with high current gain characteristics. The device is suited for through-hole as well as surface mount applications, making it a versatile choice for use in different types of consumer/audio applications. It is therefore highly recommended for use in consumer and automotive audio applications as well as other power management applications.
The specific data is subject to PDF, and the above content is for reference
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