Allicdata Part #: | 2N5401GOS-ND |
Manufacturer Part#: |
2N5401G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 150V 0.6A TO-92 |
More Detail: | Bipolar (BJT) Transistor PNP 150V 600mA 300MHz 625... |
DataSheet: | 2N5401G Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 600mA |
Voltage - Collector Emitter Breakdown (Max): | 150V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 10mA, 5V |
Power - Max: | 625mW |
Frequency - Transition: | 300MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | 2N5401 |
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A 2N5401G transistor is a three-terminal bipolar junction transistor (BJT). It is a type of single transistor device, meaning that one single transistor functions as the active component. This type of BJT amplifies current, allowing low voltage control signals to drive higher current outputs. As such, a 2N5401G transistor is suitable for a variety of applications.
A 2N5401G transistor has three terminals; the collector (C), emitter (E), and the base (B). The collector is connected to the power circuit, which is running the high current load. The base is connected to the control circuit that sends the low voltage control signals. Finally, the emitter completes the circuit, as it is connected to both the collector and base. It is important to note that the 2N5401G is an NPN (Negative-Positive-Negative) transistor; the two negative terminals must be connected to ground.
When a small current is present in the base-emitter junction of an NPN transistor, it allows a larger current to flow from the collector to the emitter. This is known as "forward bias". By controlling the base current, the collector current can be controlled. Due to the gain in current, a small current that is applied to the transistor base can operate a larger current in the transistor collector.
The current gain of the 2N5401G NPN transistor is defined as the "hFE". This is the ratio of the change in the collector current to the corresponding change in the base current. For example, a typical "hFE" of the 2N5401G is 150. This indicates that a change in the base current of 0.001 amps (1mA) will result in a change of 0.15 amps (150mA) in the collector current.
The 2N5401G transistor has a wide range of applications and can be used for different applications. It can be used for high-side switching, amplifier and voltage gain circuits, Darlington pair connections and voltage regulators. It can also be used in switching, communication, and amplification circuits in audio and radio equipment.
The 2N5401G transistor works using the principle of amplification. It amplifies the input voltage and adjusts the current flow accordingly. This enables it to control the output current, depending on the input voltage. Its characteristics make it ideal for use in a variety of applications, such as switching and amplification in audio and radio equipment.
In conclusion, the 2N5401G is a single transistor device that functions as an NPN BJT amplifier. It consists of three terminals and is used to control current flow by amplifying the input voltage. The transistor has a wide range of applications, such as high-side switching, voltage regulating, and audio and radio equipment. It is known for its high current gain, making it suitable for various applications.
The specific data is subject to PDF, and the above content is for reference
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