Allicdata Part #: | 2N5401TFR-ND |
Manufacturer Part#: |
2N5401TFR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 150V 0.6A TO-92 |
More Detail: | Bipolar (BJT) Transistor PNP 150V 600mA 400MHz 625... |
DataSheet: | 2N5401TFR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 600mA |
Voltage - Collector Emitter Breakdown (Max): | 150V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 10mA, 5V |
Power - Max: | 625mW |
Frequency - Transition: | 400MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | 2N5401 |
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The 2N5401TFR is a type of transistor that belongs to the family of Bipolar junction transistors (BJT), specifically the class of single transistors. This transistor is widely used in applications such as amplifier, switching, linear and interface circuits, triggering circuits and in general enhancement mode and switching operations.
A basic transistor acts as an amplifier, as well as an electrical switch, and can also be used as a rectifier. This action is based on the basic physics of semiconductor, in which current flows in one direction through a device only when current is applied in the other direction. When a device is in "on" mode, it is said to have been activated or "turned on." This principle is the same one used by transistors to amplify and switch signals.
Construction and Physical Components
The 2N5401TFR consists of three major components: emitter, base, and collector. The emitter is connected to the collector by a base and together they form a three-terminal device known as an NPN transistor. When current is applied to the base, the charge is attracted to the collector. As the charge is attracted to the collector, the current from the emitter flows through the base, providing amplification.
The 2N5401TFR is composed of a silicon wafer and has a maximum power dissipation of 1 watt. Its dimensions are 8.255x4.445mm, and its package type is TO-220. The device is designed to operate at -55°C to 150°C and has a low saturation voltage of 0.2 volts. Its maximum collector-emitter voltage is 40V, while its maximum base-emitter voltage is 5V and the power gain is estimated at 12 volts.
Operating Principle
The operating principle of the 2N5401TFR is based on the fact that current flows through a semiconductor only when a voltage is applied. When the voltage is applied, the electrons in the semiconductor are attracted to the anode while the holes are attracted to the cathode. As the electrons and holes are attracted to their respective pole, the current begins to flow from the anode to the cathode.
The transistor is designed such that the base terminal is set up as a gate, controlling the current flow between the emitter and the collector. The transistor is triggered on when a current is applied to the base terminal and it forms a closed loop. This causes a current to flow between the emitter and the collector and the transistor is said to be in the active state. When the current stops, the transistor is in the inactive state and current will not flow.
Uses and Applications
The most common uses of the 2N5401TFR include audio amplifiers, logic level converters, transistor switching circuits, voltage regulators and other applications where current must be switched or amplified. This device is also used in the automotive industry for making high-speed switching circuits for controlling air conditioning systems, power windows, door locks and other such vehicle functions.
The 2N5401TFR can also be used to create oscillators and frequency dividers, as well as in motor control circuits. It is commonly used in HVAC (heating, ventilation and air conditioning) system control circuits, and in alarm systems as well. This transistor has been used in many industrial applications, such as robotics, semiconductor production and automated test equipment.
Safety Considerations
When using the 2N5401TFR, proper safety protocols must be observed. This includes the use of safety glasses when working in close proximity to the device and avoiding contact with any exposed leads and unsupported components. Proper handling of the device is required, as it can become easily damaged if dropped or mishandled. The device is also sensitive to electrostatic discharge, so it is important to avoid contact with any sharp edges, metallic surfaces or objects that are prone to producing electric sparks.
In addition, it is important to make sure that the current rating and voltage rating of the device are compatible with the circuit in which it is to be used. The use of incorrectly rated components can lead to severe damage of the device and the circuit in which it is to be used. It is also important to read the data sheets of the device before installation.
Conclusion
The 2N5401TFR is a type of transistor that belongs to the family of Bipolar junction transistors (BJT), specifically the class of single transistors. This device is widely used in applications such as amplifier, switching, linear and interface circuits, triggering circuits and in general enhancement mode and switching operations. It is composed of three major components: emitter, base and collector. The operating principle of this device is based on the fact that current flows through a semiconductor only when a voltage is applied.
The 2N5401TFR is versatile and is used in a variety of different applications, including audio amplifiers, logic level converters, transistors switching circuits, voltage regulators and in motor control circuits. In addition, proper safety protocols must be observed in order to avoid any potential dangers resulting from mishandling or inappropriate wiring of the device.
The specific data is subject to PDF, and the above content is for reference
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