2N5460 Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 2N5460 is a Junction Field Effect Transistor (JFET) with a good performance and reliable operation over a wide range of temperatures and current levels. It comes in a TO-92 package making it small enough to fit into a variety of electronic designs. The 2N5460 is highly reliable and is often used in a wide variety of applications including power amplifiers, preamplifiers, oscillators, and noise reducers.

A JFET is a three terminal semiconductor device that uses the electric field generated by either a positive or negative voltage applied to a gate terminal in order to allow or deny the flow of charge carriers through the junction formed between the Source and the Drain. This type of device is more commonly known as a “field-effect transistor” or FET and is based on a voltage threshold effect. JFETs are often used when increased control over a semiconductor device is preferred, since the gate terminal can be used to adjust the characteristics of the device.

The 2N5460 is an N channel JFET and is commonly used in both single ended and differential circuitry. It is most often used in the audio frequency range, though it can be used in a variety of other applications including switching, amplification, and voltage regulation. The 2N5460 offers higher transconductance, more input resistance, and lower output capacitance than most other JFETs.

The 2N5460’s operating range is between −55°C and 175°C temperature range, and it can operate with drain to source voltages up to 10 volts. The maximum drain current is between 25 mA and 200 mA with acceptable drain to source resistance of between 10 and 200 ohms. The 2N5460 also has a relatively low input capacitance which makes it suitable for high frequency applications.

2N5460s are commonly used in a variety of applications, such as:

• Audio amplifiers
• Noise reducers
• Tube replacement circuits
• Switching circuits
• Regulators
• High frequency amplifiers and oscillators

The working principle of the 2N5460 is based on the concept of charge carriers moving from an electron pool of relatively higher concentration to an electron pool of relatively lower concentration. This is known as ‘channel conduction’. In N-channel JFETs, the pool of higher concentration electrons is on the source side and the pool of lower concentration electrons is on the drain side. By applying a positive or negative voltage to the gate terminal, the 2N5460 can control the flow of electrons and thus control the current through the device.

The 2N5460 is an excellent choice for many of the applications and uses mentioned above because it offers superior power handling capabilities and reliability. In addition, it’s small size and the ability to adjust its characteristics make it very versatile. With its wide temperature range and high speed switching capability, it can be used in a variety of applications and provide superior performance.

The specific data is subject to PDF, and the above content is for reference