Allicdata Part #: | 2N5458GOS-ND |
Manufacturer Part#: |
2N5458G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | JFET N-CH 25V 0.31W TO92 |
More Detail: | JFET N-Channel 25V 310mW Through Hole TO-92-3 |
DataSheet: | 2N5458G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
FET Type: | N-Channel |
Voltage - Breakdown (V(BR)GSS): | 25V |
Drain to Source Voltage (Vdss): | 25V |
Current - Drain (Idss) @ Vds (Vgs=0): | 2mA @ 15V |
Voltage - Cutoff (VGS off) @ Id: | 1V @ 10nA |
Input Capacitance (Ciss) (Max) @ Vds: | 7pF @ 15V |
Power - Max: | 310mW |
Operating Temperature: | 135°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | 2N5458 |
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JFET’s (Junction Field-effect Transistors) are widely used in electronic systems. They have the ability to control large currents or voltage gains when compared to other types of transistors. The 2N5458G is a widely used JFET and its application field and working principle will be discussed in this article.
The 2N5458G is a widely used N-channel JFET (Junction Field-effect Transistor). It is commonly used in audio circuitry. The 2N5458G features a low saturation voltage, which allows it to be used in low-voltage applications. It also has low noise characteristics and can be used in high-voltage applications.
The 2N5458G is a voltage-dependent device and its behavior is determined by the voltage applied to its gate. When a voltage is applied to the gate, it creates an electric field in the semiconductor channel between the source and the drain. The electric field alters the carrier concentration in the channel, which modulates the conductance of the channel. Depending on the voltage, the channel will either be conducting (when the gate voltage is positive) or non-conducting (when the gate voltage is negative).
The current flow in a JFET is also dependent on the voltage applied to its gate. When the gate voltage is increased, the carrier concentration increases and the drain current increases. When the gate voltage is decreased, the carrier concentration decreases and the drain current decreases. This behavior is the basis of the functioning of the 2N5458G.
The 2N5458G is typically used in amplifier circuits. It enhances small signal currents and amplifies them to a larger current. It is commonly used in oscillator circuits as well. It is also used in digital logic circuits and power supplies.
The 2N5458G is also used in analog-to-digital converters. An ADC is an electronic device that converts an analog signal into a digital signal. The analog signal is applied to the input of the ADC and is then converted into a series of binary numbers. The 2N5458G is used in the process of converting the input signal into a digital signal.
The 2N5458G is also used in radio frequency (RF) applications. It amplifies the signal and helps in improving the range of the transmitter. It is also used in switch mode power supplies and amplifiers that are used in audio equipment.
The working principle of the 2N5458G is simple and straightforward. The voltage applied to its gate determines the behaviour of the device. Depending on the voltage, the channel will either be conducting or non-conducting. The device is used in many electronic applications and is one of the most versatile and useful transistors available.
The specific data is subject to PDF, and the above content is for reference
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