2N5401_D81Z Allicdata Electronics
Allicdata Part #:

2N5401_D81Z-ND

Manufacturer Part#:

2N5401_D81Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 150V 0.6A TO-92
More Detail: Bipolar (BJT) Transistor PNP 150V 600mA 400MHz 625...
DataSheet: 2N5401_D81Z datasheet2N5401_D81Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Power - Max: 625mW
Frequency - Transition: 400MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: 2N5401
Description

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The 2N5401_D81Z is a type of transistor in the Bipolar Junction Transistor (BJT) – Single category. It is an NPN transistor used for various general-purpose applications. Generally, it is used in small-signal amplification as well as a switch in circuits. The 2N5401_D81Z transistor is a multipurpose and versatile semiconductor device that is used mainly in low-power applications.

The 2N5401_D81Z transistor has a maximum collector power dissipation of 0.3 W and a maximum collector-emitter voltage of 40 V. It is constructed with an NPN diffusion region architecture, consisting of a central base layer, two lateral collector regions, and two lateral base regions. Each of these regions is separated by an isolation region. The isolation region helps to reduce the parasitic resistance between the collector and base, thus increasing the voltage gain of the transistor.

The 2N5401_D81Z is mainly utilized in circuits as an amplifier. It requires two DC voltages – one to regulate the current in the collector-base junction and the other to regulate the current in the emitter-base junction. When the base current is brought above the base-emitter cut-off voltage level, the transistor goes into the cutoff state, and no current flows through the collector-base junction. However, when the base current is increased beyond the base-emitter cut-off voltage level, the transistor goes into the saturation state, and current begins to flow through the collector-base junction. This process is known as the ‘switch-on’ effect and is the basis of the bipolar junction transistor\'s operation.

The 2N5401_D81Z is generally recommended for use in circuits that require low-power amplification. It is suitable for applications such as audio amplification, power switching, and signal amplification. Due to its low-power consumption, it is also widely used for battery-operated and portable electronics. As the 2N5401_D81Z also has a wide voltage range, it is also suitable for use in circuits that operate at higher voltages. As such, it can be used in a wide range of analog and digital circuits, from low-power transistors to high-powered transistors.

The 2N5401_D81Z is one of the most common transistors used in digital and analog circuitry today. It is highly reliable, robust and widely available in different packages. Its low-power consumption and versatile performance make it an ideal choice for a wide variety of applications.

The specific data is subject to PDF, and the above content is for reference

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