Allicdata Part #: | 2N5457_D74Z-ND |
Manufacturer Part#: |
2N5457_D74Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | JFET N-CH 25V 625MW TO92 |
More Detail: | JFET N-Channel 25V 625mW Through Hole TO-92-3 |
DataSheet: | 2N5457_D74Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Voltage - Breakdown (V(BR)GSS): | 25V |
Current - Drain (Idss) @ Vds (Vgs=0): | 1mA @ 15V |
Voltage - Cutoff (VGS off) @ Id: | 500mV @ 10nA |
Input Capacitance (Ciss) (Max) @ Vds: | 7pF @ 15V |
Power - Max: | 625mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | 2N5457 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
2N5457 is one of the widely used JFETs (Junction Field Effect Transistors). It is a dual gate N-Channel enhancement mode JFET with high input impedance and low noise figure. It is known for its excellent performance in RF, IF and microwave applications.
The 2N5457_D74Z is a symbolized JFET model of the 2N5457. It is a dedicated device used in many radio-frequency (RF) applications. This device is suitable for use as an oscillator, mixer, or amplifier, and offers high output power. The 2N5457_D74Z is also used in radio transmitters, as well as in gamma or neutron radiation detectors. It is available in surface-mount packages, including plastic and ceramic packages.
The application fields of the 2N5457_D74Z are varied, but the device is best known for its excellent performance in the following applications: communications, power management, audio frequency amplifiers, IF amplifiers, voltage amplifiers, UHF amplifiers, computer debugging, and others.
The working principle behind the 2N5457_D74Z is based on a simple concept. It is based on the use of two transistors that are connected together in a differential manner. The output is taken from the gate of the first transistor and the input is applied to the gate of the second transistor. The current that flows through the two transistors is then used to control the output voltage of the device.
The 2N5457_D74Z is a low-noise device with an excellent input impedance and low power consumption. The device has a wide range of applications where it can be used as a mixer, amplifier, or oscillator. As an amplifier, the device can easily increase signals in the order of hundreds of dB and in many cases, it can provide a large increase in gain.
The basic construction of the 2N5457_D74Z is similar to other JFETs, such as the 2N4401 and the 2N4403. The device has two gates, which are connected to metal-insulated sources. The source is then connected to the drain, which serves as the output. The device is powered by biasing, usually through a resistor or a capacitor.
The 2N5457_D74Z is a very reliable device and offers high performance and low power consumption in RF applications. It is an ideal choice for use in radio frequency oscillators, mixers, amplifiers, and other applications. The device has the ability to amplify signals of the order of hundreds of dB without introducing too much noise.
The specific data is subject to PDF, and the above content is for reference
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