Allicdata Part #: | 2N5458_D27Z-ND |
Manufacturer Part#: |
2N5458_D27Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | JFET N-CH 25V 625MW TO92 |
More Detail: | JFET N-Channel 25V 625mW Through Hole TO-92-3 |
DataSheet: | 2N5458_D27Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Voltage - Breakdown (V(BR)GSS): | 25V |
Current - Drain (Idss) @ Vds (Vgs=0): | 2mA @ 15V |
Voltage - Cutoff (VGS off) @ Id: | 1V @ 10nA |
Input Capacitance (Ciss) (Max) @ Vds: | 7pF @ 15V |
Power - Max: | 625mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | 2N5458 |
Description
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2N5457 and 2N5480 are two types of JFET-N-channel devices which are commonly used in a wide variety of applications. The 2N5457 and 2N5480 are available in small symmetrical packages making them ideal for use in tight board configurations. Both types of devices have drain to source currents ranging from 1.0 to 4.0 amps and have source-to-drain voltages ratings ranging from 3.0 to 20.0 volts. The two devices have different gate to source voltage ratings, the 2N5457 being rated from -8.0 to -12.0 Volts, and the 2N5480 from -4.0 to -6.0 Volts.The 2N5458_D27Z is a JFET-N-channel device which is an ideal choice for switch, level, and interface applications. It has a drain current rating of 1.0 Amp and a drain to source voltage range of 4.0 to 20.0 volts. The gate to source voltage rating for this device is -2.0 to -5.0 volts.The 2N5458_D27Z is a great choice when higher input impedance is required because it has higher input impedance compared to most other types of transistors. It can be used to buffer or isolate signals, or to provide impedance matching between two circuits. It is also ideal for use as a switch, as it can easily be used to switch both polarities of signals.2N5458_D27Z devices have some unique characteristics compared to other JFET devices. They have a relatively low input capacitance, meaning that they require less drive voltage than many other types of transistors. This makes them more suitable for applications where drive voltage must be kept low. Additionally, the low input capacitance makes them an ideal choice for broadband applications, as they require less drive voltage to operate effectively.The 2N5458_D27Z are also very robust, meaning that they can operate reliably in environments of high temperatures, or where the device is exposed to significant levels of vibration. This makes them well suited for applications in portable electronics and other harsh environments.When considering the working principle of 2N5458_D27Z, it is important to understand that these devices are based on a principle of surface potential modulation. This principle is the basis for the operation of JFETs, and is often referred to as the \'electron-hole injection effect\'. This is a phenomenon in which an electron injects from the source region of the device, creating an increased potential on the surface of the device, resulting in an increased gate to source voltage. This phenomenon is used to control the current flow through the device as the applied gate to source voltage is varied.The 2N5458_D27Z is very versatile and can be used in a wide variety of applications such as amplifiers, switches, level and interface controllers, voltage dividers and many others. It is a device which offers good performance and reliability, making it a good choice for many circuits.
The specific data is subject to PDF, and the above content is for reference
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