2N5459_D27Z Allicdata Electronics
Allicdata Part #:

2N5459_D27Z-ND

Manufacturer Part#:

2N5459_D27Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: JFET N-CH 25V 625MW TO92
More Detail: JFET N-Channel 25V 625mW Through Hole TO-92-3
DataSheet: 2N5459_D27Z datasheet2N5459_D27Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 25V
Current - Drain (Idss) @ Vds (Vgs=0): 4mA @ 15V
Voltage - Cutoff (VGS off) @ Id: 2V @ 10nA
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Power - Max: 625mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: 2N5459
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 2N5459_D27Z is a high-performance, low-noise, JFET junction field-effect transistor that is commonly used in RF, oscillator, and mixer applications. It is a three-terminal device that consists of an N-channel gate source region and two P-channel gate source regions. The 2N5459_D27Z is a depletion-mode FET and its operation depends on the depletion region that is created when a voltage is applied to the gate terminal. The depletion region modulates the current flow between the gate and the source, thereby allowing the gate to control the flow of current through the transistor.

The major benefit of the 2N5459_D27Z is its low-noise operation compared to other types of JFETs. Thanks to its low-noise characteristics, the 2N5459_D27Z is ideal for applications where high-sensitivity operation is required such as in radio receivers, oscillators, and mixers. The 2N5459_D27Z’s low-noise operation is especially useful in applications where the desired signal must be accurately detected with minimal noise.

The 2N5459_D27Z also offers excellent gain linearity and high common-mode rejection ratios which make it a great choice for many RF applications. Its high common-mode rejection ratios make it ideal for differential amplifier circuits since it helps to reduce the amount of noise picked up in the circuit. It also offers excellent power gains of up to 10dB, making it suitable for low-power amplifier circuits.

The 2N5459_D27Z is an excellent choice for high-bandwidth applications due to its high speed of operation. It is capable of switching between on/off states in just a few nanoseconds and can even support high-speed data transfer rates of up to 200Mbits/s.

In addition, the 2N5459_D27Z offers good temperature stability and excellent thermal management capabilities thanks to its on-chip thermal sensors. Its thermal sensing ability helps to maintain the temperature of the transistors within acceptable limits even under immense fluctuations in operating temperature. This helps to ensure stable and reliable operation even in challenging operating environments.

The 2N5459_D27Z is also easy to implement in circuit designs thanks to its convenient Gate Source control configuration. The Gate Source control configuration allows designers to easily adjust the voltage on the gate of the transistor to control the current flow through the device. This allows the user to easily set or adjust the operating parameters of the device to suit the desired application.

Overall, the 2N5459_D27Z is a versatile and reliable JFET that is well suited for a variety of RF, oscillator, and mixer applications. Its low-noise characteristics, high common-mode rejection ratios, excellent gain linearity, and high speed of operation make it an excellent choice for many applications. In addition, its on-chip thermal sensor and Gate Source control configuration make it easy to use and implement in circuit designs.

The specific data is subject to PDF, and the above content is for reference

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