Allicdata Part #: | 2SA1179N6-CPA-TB-E-ND |
Manufacturer Part#: |
2SA1179N6-CPA-TB-E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 50V 0.15A CP |
More Detail: | Bipolar (BJT) Transistor PNP 50V 150mA 180MHz 200m... |
DataSheet: | 2SA1179N6-CPA-TB-E Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 150mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 1mA, 6V |
Power - Max: | 200mW |
Frequency - Transition: | 180MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
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Transistors are widely used in various applications, ranging from digital electronics and telecommunications to energy management. Bipolar junction transistors (BJTs) are a type of transistor widely used in digital electronics, telecommunication systems and energy management applications. Among them is the 2SA1179N6-CPA-TB-E. This article provides an overview of this device, including its application fields and working principle.
The 2SA1179N6-CPA-TB-E belongs to the single bipolar junction transistor (BJT) category. It is an NPN transistor that is used for different types of electronic switching and amplification. The device, which has a Pb (lead) free termination finish, is mainly used in automotive and telecommunications applications, and is particularly suitable for applications that require high isolation.
The 2SA1179N6-CPA-TB-E is a transistor with three terminals, namely the emitter, the base, and the collector. It has a maximum current gain of 660, a voltage collector emitter of 30V, and a maximum power dissipation of 300mW. Additionally, the device has a collector-base voltage of 40V and a current collector-Emitter Saturation of 0.2mA.
The working principle of the 2SA1179N6-CPA-TB-E is simple and effective. When the base voltage is increased, the current through the device is increased. This increasing current semi-conducts the electrons from the emitter to the collector. The increased current of the electrons is what amplifies the circuit. On the other hand, when the base voltage is decreased, the current is decreased, thus reducing the amount of electrons semi-conducted from the emitter to the collector.
The 2SA1179N6-CPA-TB-E is a convenient component for many applications due to its size, performance, and versatility. It is well-suited for automotive and telecommunications applications. This device is also used as a switching device in various media devices, such as radios, televisions, and amplifiers. Additionally, its compact size makes it ideal for various space-constrained applications.
In conclusion, the 2SA1179N6-CPA-TB-E transistor belongs to the single bipolar junction transistor category. It is mainly used in automotive and telecommunications applications that require high isolation. It has three terminals, namely the emitter, the base and the collector and functions on the basis of increasing and decreasing current by increasing and decreasing the voltage applied to the base. Its capability to generate increased current when the base voltage is increased allows it to be used as an amplifier or switch in various media applications.
The specific data is subject to PDF, and the above content is for reference
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