![2SA1162GT1 Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | 2SA1162GT1-ND |
Manufacturer Part#: |
2SA1162GT1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 50V 0.15A SC-59 |
More Detail: | Bipolar (BJT) Transistor PNP 50V 150mA 80MHz 200mW... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 150mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 2mA, 6V |
Power - Max: | 200mW |
Frequency - Transition: | 80MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SC-59 |
Base Part Number: | 2SA1162 |
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2SA1162GT1 is a PNP transistor manufactured by Toshiba Semiconductor. It is classified as a single bipolar junction transistor (BJT). It has an encapsulation of a 3-pin SOT-23 package type with a size of 1.6mm x 1.6mm x 0.95mm.
As one of the most widely used transistors, 2SA1162GT1 has found its application in a variety of fields. It is suitable for general-purpose switching, amplifier circuits and motor drive circuits. Specifically, it is used in low noise amplifiers, audio amplifier circuits, high-frequency circuits and transistor radios.
The working principle of 2SA1162GT1 is based on the principle of a semiconductor diode. It consists of three semiconductor layers - two P-type layers, called emitter and collector, and an N-type layer, called the base. When a small current flows through the base, it activates the circuit and allows the larger current to flow between the emitter and the collector.
The main characteristics of 2SA1162GT1 are its current gain and capacitance. The current gain is typically 300~800, which means that for every one watt of power that enters the base, 3 to 8 watts of power can be outputted from the collector. Its collector-base capacitance is typically 0.4pF. Another characteristic is the reverse saturate current, which is typically 0.1mA.
2SA1162GT1 is used in various electronic systems, including computers and cell phones. Its current gain and reverse saturate current make it an ideal transistor for low-noise amplifiers and audio amplifier circuits. By regulating the current in the base, the transistor can be used to switch circuits on and off as well as amplify signals. This makes it a versatile component for a variety of applications.
In conclusion, 2SA1162GT1 is a PNP transistor manufactured by Toshiba Semiconductor. It is classified as a single bipolar junction transistor and is used in a variety of fields. Its working principle is based on the diode principle and its features, such as current gain, reverse saturate current and collector-base capacitance, make it an ideal component for a range of applications. Therefore, 2SA1162GT1 is an indispensable component for many electronic systems.
The specific data is subject to PDF, and the above content is for reference
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