2SA1162GT1 Allicdata Electronics
Allicdata Part #:

2SA1162GT1-ND

Manufacturer Part#:

2SA1162GT1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 50V 0.15A SC-59
More Detail: Bipolar (BJT) Transistor PNP 50V 150mA 80MHz 200mW...
DataSheet: 2SA1162GT1 datasheet2SA1162GT1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Power - Max: 200mW
Frequency - Transition: 80MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SC-59
Base Part Number: 2SA1162
Description

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2SA1162GT1 is a PNP transistor manufactured by Toshiba Semiconductor. It is classified as a single bipolar junction transistor (BJT). It has an encapsulation of a 3-pin SOT-23 package type with a size of 1.6mm x 1.6mm x 0.95mm.

As one of the most widely used transistors, 2SA1162GT1 has found its application in a variety of fields. It is suitable for general-purpose switching, amplifier circuits and motor drive circuits. Specifically, it is used in low noise amplifiers, audio amplifier circuits, high-frequency circuits and transistor radios.

The working principle of 2SA1162GT1 is based on the principle of a semiconductor diode. It consists of three semiconductor layers - two P-type layers, called emitter and collector, and an N-type layer, called the base. When a small current flows through the base, it activates the circuit and allows the larger current to flow between the emitter and the collector.

The main characteristics of 2SA1162GT1 are its current gain and capacitance. The current gain is typically 300~800, which means that for every one watt of power that enters the base, 3 to 8 watts of power can be outputted from the collector. Its collector-base capacitance is typically 0.4pF. Another characteristic is the reverse saturate current, which is typically 0.1mA.

2SA1162GT1 is used in various electronic systems, including computers and cell phones. Its current gain and reverse saturate current make it an ideal transistor for low-noise amplifiers and audio amplifier circuits. By regulating the current in the base, the transistor can be used to switch circuits on and off as well as amplify signals. This makes it a versatile component for a variety of applications.

In conclusion, 2SA1162GT1 is a PNP transistor manufactured by Toshiba Semiconductor. It is classified as a single bipolar junction transistor and is used in a variety of fields. Its working principle is based on the diode principle and its features, such as current gain, reverse saturate current and collector-base capacitance, make it an ideal component for a range of applications. Therefore, 2SA1162GT1 is an indispensable component for many electronic systems.

The specific data is subject to PDF, and the above content is for reference

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