Allicdata Part #: | 2SA1020-Y(ND1AF)-ND |
Manufacturer Part#: |
2SA1020-Y(ND1,AF) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS PNP 2A 50V TO226-3 |
More Detail: | Bipolar (BJT) Transistor PNP 50V 2A 100MHz 900mW T... |
DataSheet: | 2SA1020-Y(ND1,AF) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 50mA, 1A |
Current - Collector Cutoff (Max): | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 500mA, 2V |
Power - Max: | 900mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Long Body |
Supplier Device Package: | TO-92MOD |
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2SA1020-Y(ND1,AF) is a type of bipolar junction transistor (BJT) also known as a single transistor. It is a general-purpose two-terminal device with three layers, typically composed of two different semiconductor materials, with a total of four PN layers. It is used for switching and amplifying electrical signals in a wide variety of applications.
The 2SA1020-Y(ND1,AF) transistor is a silicon NPN type, with maximum collector current of 1A and collector-emitter voltage (Vce) of 100V. It includes built-in bias resistors and is housed in a 3-pin TO-92 package. The 2SA1020-Y(ND1,AF) transistor has a high voltage rating and a suitable gain bandwidth product of 400 MHz, making it suitable for a variety of applications.
The 2SA1020-Y(ND1,AF) is a dual-in-line package with a low current draw, and hence is the ideal choice for applications where space is a major concern. It can be used in audio applications, such as sound or music amplifiers, as well as for signal amplifiers in signal processing circuits. It is also suitable for power switching in low power applications. The low current capabilities of the 2SA1020-Y(ND1,AF) also make it a good choice for low power circuits such as signal conditioning and signal protection.
In order to understand the working principle of a 2SA1020-Y(ND1,AF) transistor, we first need to understand its structure and electrical behavior. The transistor is composed of three main regions – base, emitter and collector – which are separated by two PN junctions. The base-emitter junction is forward biased when a positive potential is applied to the base and a negative potential is applied to the emitter. This forward bias causes electrons from the emitter to flow through the base-emitter junction and enter the base region. The electrons in the base are then attracted to the collector, resulting in a current flow from the collector to the emitter.
The amount of current flowing through the device is controlled by the base current, which is dependent on the applied voltage. In other words, when the base voltage is increased, the base current increases, causing an increase in the collector current. The gain of the transistor is determined by the ratio of the collector current to the base current, which is known as the “common-emitter” current gain. The higher the common-emitter current gain, the greater the output power.
The 2SA1020-Y(ND1,AF) is an ideal choice for a wide range of applications which require a low current draw, high voltage rating and high operating frequency. These include audio amplifiers, signal amplifiers, low power applications and power switching. The built-in bias resistors reduce the complexity of any circuit design, while the high voltage rating and gain bandwidth product make it suitable for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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