2SA1680,T6ASTIF(J Allicdata Electronics
Allicdata Part #:

2SA1680T6ASTIF(J-ND

Manufacturer Part#:

2SA1680,T6ASTIF(J

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS PNP 2A 50V TO226-3
More Detail: Bipolar (BJT) Transistor PNP 50V 2A 100MHz 900mW T...
DataSheet: 2SA1680,T6ASTIF(J datasheet2SA1680,T6ASTIF(J Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD
Description

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The 2SA1680 and T6ASTIF(J are both single bipolar junction transistors (BJT). They are usually used for preamplifier applications, but can also be used for other tasks. As with most transistors, the 2SA1680 and T6ASTIF(J have three leads connected to three terminals. The collector lead is the lead to which a voltage is supplied and the base lead is the lead which is used to control the voltage across the collector and emitter leads. The emitter lead serves as the return.

The 2SA1680 and T6ASTIF(J both feature a peak collector-to-emitter current rating of 1A and a maximum collector-to-base voltage of 50V. They also have a very low noise level of up to 16dB. The 2SA1680 is able to operate up to 200MHz and is intended for use in linear amplifier applications requiring low distortion. The T6ASTIF(J is intended for use in switching and signal processing applications where high accuracy and performance are necessary.

Using the 2SA1680 and T6ASTIF(J is relatively simple. Both have a standard base lead and an associated voltage from 0.85 volts to 1.3 volts. This voltage changes the amount of current flowing through the collector lead. Increasing the base voltage increases the amount of current flowing through the collector, while decreasing it decreases the amount of current flowing through the collector. The collector current is directly proportional to the base voltage, making it easy to control. The operating principle of these transistors is the same regardless of their application.

In power amplifier applications, the 2SA1680 and T6ASTIF(J are capable of handling up to 1A of current, allowing them to be used in high-power applications. The low noise level makes them ideal for audio-based applications, where they can help improve signal-to-noise ratio. The T6ASTIF(J is especially well-suited for use in frequency division applications, as it has a peak frequency of 100MHz, making it capable of processing very high frequencies.

When used in signal processing applications, the 2SA1680 and T6ASTIF(J are capable of providing high-precision results, as their outputs have very low noise levels and can be accurately controlled. The 2SA1680 is especially suited for low-power applications, where it can provide a high signal-to-noise ratio, while the T6ASTIF(J is better suited for high-power applications, where its high-frequency capabilities can process signals more accurately. In switching applications, the low collector-to-base voltage of the transistors makes them less prone to failure and allows them to be used even with high voltage inputs.

Overall, the 2SA1680 and T6ASTIF(J are both powerful, reliable transistors which are capable of performing a variety of tasks. Their versatile design and wide range of operating parameters make them ideal for both low-power and high-power applications, from linear amplifiers to frequency division and signal processing. Their low noise levels and accurate outputs make them especially suitable for precision applications.

The specific data is subject to PDF, and the above content is for reference

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