2SB1182TLQ Allicdata Electronics
Allicdata Part #:

2SB1182TLQTR-ND

Manufacturer Part#:

2SB1182TLQ

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PNP 32V 2A SOT-428
More Detail: Bipolar (BJT) Transistor PNP 32V 2A 100MHz 10W Sur...
DataSheet: 2SB1182TLQ datasheet2SB1182TLQ Datasheet/PDF
Quantity: 10000
Stock 10000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Not For New Designs
Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 32V
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
Power - Max: 10W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: CPT3
Base Part Number: 2SB1182
Description

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The 2SB1182TLQ is a single bipolar transistor commonly used in many circuits. It is a germanium-silicon alloy transistor with a plastic package. It has high gain and current capability, making it well suited for many applications, such as in inverters, amplifiers, switching circuits, and more. It can also be used as a high-frequency switch.

The 2SB1182TLQ is a type of NPN transistor, meaning that it has three active terminals: one positive Gate, one positive Base, and one negative Collector. The Base is the control electrode, which determines whether current flows from Collector to the Emitter or not. When a positive voltage is applied to the Gate, electrons from the Base will be attracted and current will flow from Collector to Emitter. Conversely, when the Gate voltage is reduced to zero or less, the transistor will switch off.

The 2SB1182TLQ has several distinct characteristics that make it particularly suitable for use in many simple and complex circuits. For example, it exhibits a high gain, which is around 250 of current gain. It also has a low noise figure and an ability to operate in higher temperatures when compared to other types of transistors. Additionally, its exceptional current capacity makes it suitable for low-frequency applications such as transconductance amplifiers.

Another advantage of the 2SB1182TLQ is its robust construction. It features a metal oxide semiconductor (MOS) structure, which means that it is capable of withstanding high temperatures and voltages. Moreover, it has low junction-to-case electrical noise, which allows it to perform well even under extreme conditions. As such, it is well-suited to applications that require reliable performance.

The 2SB1182TLQ is an excellent choice for circuits that require high performance, reliability, and stability. It is particularly well-suited for applications that require low-noise or high-speed voltage switches as well as circuits that require stable DC/DC conversion. Furthermore, its excellent current capacity makes it suitable for a wide range of audio applications, such as low-noise amplifiers and high-bit-rate digital audio processing.

In summary, the 2SB1182TLQ is a single bipolar NPN transistor with a wide variety of applications. This device has a high gain, low noise figure, and excellent current capacity, making it suitable for use in many simple and complex circuits. Moreover, its robust construction and ability to operate in extreme temperatures and voltages makes it an ideal choice for applications that require reliable performance. Thanks to its excellent characteristics, the 2SB1182TLQ is an excellent choice for all forms of modern circuit design.

The specific data is subject to PDF, and the above content is for reference

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