2SB1707TL

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• 2SB1707TL Application Field and Working Principle

  • Transistors - Bipolar (BJT) - Single

  • Introduction

    The 2SB1707TL is a type of N-Channel Bipolar Junction Transistor (BJT) with an extended collector-emitter voltage rating (VCEO) of up to 300V. It is the third generation high-voltage, high-power BJT in the 2SB1707-series, and its excellent characteristics make it a popular choice for power control and sensing operations.

    Structure and Principles

    The 2SB1707TL consists of two PN-junctions that form three terminals: the emitter (E), the base (B) and the collector (C). These junctions allow the flow of electrons between the emitter and base, and between the base and collector, creating amplified current control on the collector side. This process is known as amplification and can be describebed by considering the equilibrium between the electrons that flow into the base, and the electrons that flow out of the collector.

    Bias Voltage Sources

    In order for a BJT to generate amplified current control, it must be biased accordingly. To properly bias a transistor, two voltage sources (VBE - Base-Emitter voltage and VBC - Base-Collector voltage) must be present. This is achieved through the combination of either an NPN or a PNP transistor with a proper circuit configuration. To create necessary electrical fields, VBE and VBC voltage sources are connected to the base terminal.

    Collector-Emitter Voltage

    The most important parameter used to characterize a BJT is its collector-emitter voltage (VCEO). It is the maximum voltage between the collector and emitter terminals that the transistor can handle. The 2SB1707TL has a VCEO rating of up to 300V.

    Application Field

    The extended VCEO rating of the 2SB1707TL makes it suitable for use in applications such as motor control circuits, power switches, voltage regulators, and sound amplifiers. Additionally, it can be used to sense small voltages to control external circuits.

    Power Rating and Thermal Resistance

    The nominal range of the collector-emitter voltage drop is between 20V and 250V, with a maximum DC current rating of 8A. This is a relatively high power rating for small BJTs, and makes it suitable for operating at higher temperatures for extended periods of time. The 2SB1707TL has an excellent thermal resistance (Rth,JC) of 0.7ºC/W, which allows the transistor to dissipate heat more efficiently.

    Conclusion

    In conclusion, the 2SB1707TL is an excellent choice for applications that require high-power, high-voltage circuit control or sensing. It has a wide range of robust characteristics, including extended VCEO rating, high-power rating, and excellent thermal characteristics, that make the it suitable for a wide range of applications.

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