Allicdata Part #: | 2SB167900LTR-ND |
Manufacturer Part#: |
2SB167900L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PNP 10V 0.5A S-MINI |
More Detail: | Bipolar (BJT) Transistor PNP 10V 500mA 130MHz 150m... |
DataSheet: | 2SB167900L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 10V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 8mA, 400mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 130 @ 500mA, 2V |
Power - Max: | 150mW |
Frequency - Transition: | 130MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SMini3-G1 |
Base Part Number: | 2SB1679 |
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The 2SB167900L is a single bipolar transistor used for amplification and switching of low-level voltage signals. This type of transistor is also known as an NPN type, referring to the arrangement of its three electrical terminals: collector (C), base (B), and emitter (E).
The 2SB167900L is a small-signal transistor developed for low-noise and low-power applications. It is suitable for use in RF andIF amplifier circuits, oscillator circuits, and waveform circuits. It has a low noise level of 2dB, a low breakdown voltage of 60V, and a high-frequency (fT) of 20MHZ. The 2SB167900L has a max collector current rating of 300mA, a collector-emitter voltage of 100V, and a collector-base voltage of 150V. Additionally, it has a very low thermal resistance of 0.14K per watt.
The main application of the 2SB167900L is for amplification, switching, and voltage regulation. Its small size and wide operating range make it ideal for use in printed circuit boards. Its fast switching speed and low noise level enable it to perform various tasks in data processing circuits, such as amplifying and switching signals in radio and television receivers, as well as other audio/video applications. It works effectively in high voltage and high frequency applications, making it a suitable choice for use in aerospace, medical, and telecommunications industries.
The working principle of the 2SB167900L can be explained by the basic electron theory. An emitter current flows through the transistor when the base-emitter voltage is applied. A small change in the base-emitter voltage will result in a large change in the collector current. Thus, the transistor serves as an amplifier of small signal levels applied to the base terminal. The collector current is then directed to a load, converting the small input current into a large output current on the collector. The transistor operates in three different modes, namely: active mode, cutoff mode and saturation mode.
In active mode, the collector-emitter voltage is relatively minimal and the output current increases rapidly with the input signal. In cutoff mode, the collector voltage reduces to near zero and the output current drops accordingly. In saturation mode, the collector voltage reaches nearly the same level as the base-emitter voltage, resulting in an output current that is nearly constant, regardless of the input signal.
The 2SB167900L is a versatile and reliable type of semiconductor device that can be used in a variety of electronic applications. Its small size, high current rating and wide operating range make it ideal for use in a variety of applications. It works effectively in RF and IF amplifier circuits, oscillator circuits, and waveform circuits, and is suitable for high-noise, low-power applications. Its fast switching speed, low thermal resistance, and low noise level make it a suitable choice for use in radio and television receivers, as well as other audio/video applications.
The specific data is subject to PDF, and the above content is for reference
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