2SB1123T-TD-E Discrete Semiconductor Products |
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Allicdata Part #: | 2SB1123T-TD-EOSTR-ND |
Manufacturer Part#: |
2SB1123T-TD-E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 50V 2A SOT89-3 |
More Detail: | Bipolar (BJT) Transistor PNP 50V 2A 150MHz 500mW S... |
DataSheet: | 2SB1123T-TD-E Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 700mV @ 50mA, 1A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 100mA, 2V |
Power - Max: | 500mW |
Frequency - Transition: | 150MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | PCP |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The 2SB1123T-TD-E is a type of single bipolar junction transistor (BJT). BJTs are a type of semiconductor that consists of three different layers of material. These three layers form a p-n-p sandwich structure which, when a potential difference is applied across the structure, current flows from the base along the emitter-base junction, and the current gain is then determined by the collector-base junction.
The 2SB1123T-TD-E is a type of low-voltage NPN BJT. NPN BJTs are designed to conduct current in one direction, from the base to the collector, while blocking current in the opposite direction. This type of transistor is often used in circuits which require low power, as well as low noise.
2SB1123T-TD-E transistors are primarily used in small signal amplification applications, such as amplifying signals in radio circuits, audio amplifiers, and analog-to-digital (A/D) converters. This type of BJT can also be used to switch signals with low power dissipation and noise. 2SB1123T-TD-E transistors are ideal for low voltage, small signal amplification and switching applications due to their low current and power requirements.
When power is applied to a 2SB1123T-TD-E transistor, the base-emitter junction allows current to flow from the base to the collector, providing a current gain. The transistor will then amplify the input signal, applying the amplified signal to the output. Additionally, the 2SB1123T-TD-E transistor can be used to switch signals, such as switching on or off a load. The NPN BJT can be either switched on or off by applying the appropriate electrical potential difference between the base and the collector.
The 2SB1123T-TD-E is a popular choice of transistor for small signal amplification and switching applications due to its low power requirements and low noise. It is particularly useful for applications which require low current and power, as well as low noise. Furthermore, the modest power capability of the 2SB1123T-TD-E allows it to be used in a wide range of applications, from radio circuits to A/D converters.
The specific data is subject to PDF, and the above content is for reference
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