2SB158900L Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	1.5A
Voltage - Collector Emitter Breakdown (Max):	10V
Vce Saturation (Max) @ Ib, Ic:	350mV @ 25mA, 1A
Current - Collector Cutoff (Max):	1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 400mA, 1V
Power - Max:	1W
Frequency - Transition:	190MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-243AA
Supplier Device Package:	MiniP3-F1
Base Part Number:	2SB1589

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Introduction The 2SB158900L is a single bipolar junction transistor (BJT). It is an integrated semiconductor device used mainly in high voltage applications such as switching power supplies, radio-frequency (RF) controls and voltage stabilization.Application Field The superior high voltage capability of the 2SB158900L makes it an ideal choice for use in applications such as motor drive and control, high-power transmission and high-voltage switching circuits that require a high degree of efficiency and durability.Due to its superior high voltage capacity and relatively low collector-emitter saturation voltage, it can also be used in a wide range of other applications such as AC/DC rectifiers, free-wheeling diodes, and voltage regulators.Its low input capacitance and high operating temperature range also make it an excellent choice for use in applications that require high-speed switching such as RF remote control circuits and switching power supplies.Working PrincipleBJTs are three terminal devices operated by change in the charge on the base, controlling the emitter-collector current. Typically, BJTs are bipolar devices meaning the full voltage range is available across the collector and emitter terminals, allowing the base voltage to control the collector-emitter current. Common operation modes include:• Common-collector (or "Emitter-Follower"): In this configuration, the BJT amplifies changes in voltage at the emitter and transfers them to the collector without any gain. • Common-emitter: In this mode, the BJT amplifies the base-emitter voltage and transfers the amplified signal to the collector. • Common-base: In this configuration, the BJT amplifies an input signal at the base and transfers it to the collector-emitter junction.ConclusionThe 2SB158900L is a single bipolar junction transistor that is ideally suited for a wide variety of applications such as high-power transmission, motor drive and control, AC/DC rectifiers and voltage regulators. Its superior high voltage capacity, low input capacitance and high operating temperature range make it well-suited for high-speed signal switching applications. Its three operating modes - common-collector, common-emitter, and common-base - allow it to be used in a wide range of applications.

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