2SB1236TV2R Allicdata Electronics
Allicdata Part #:

2SB1236TV2R-ND

Manufacturer Part#:

2SB1236TV2R

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PNP 120V 1.5A ATV
More Detail: Bipolar (BJT) Transistor PNP 120V 1.5A 50MHz 1W Th...
DataSheet: 2SB1236TV2R datasheet2SB1236TV2R Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 2V @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 5V
Power - Max: 1W
Frequency - Transition: 50MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 3-SIP
Supplier Device Package: ATV
Description

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The 2SB1236TV2R is a single-bipolar transistor that comes in a variety of formats, including surface-mount, plug-in and thru-hole, and can be used in many fields of applications. Each type of 2SB1236TV2R has its own unique characteristics and working principle.

As a single-bipolar transistor, the 2SB1236TV2R device functions by allowing the current to flow through two P-N junction diodes in either one or both directions. This allows for the transistor to switch from an OFF state to an ON state in response to the applied base current, resulting in amplification of the input signal. The 2SB1236TV2R is a NPN type, meaning that it relies on a positive voltage on the gate and a negative voltage on the source for the current to flow.

The 2SB1236TV2R has a few key applications that make it an attractive choice for designers. The device\'s amplification capabilities make it ideal for use in circuits requiring low-level analog signals, such as those found in medical, automotive, audio, and communications equipment. Additionally, the 2SB1236TV2R can be used in power regulation and distribution circuits to reduce the amount of power dissipated.

The 2SB1236TV2R is also a popular choice in amplifier designs, as its PN junction diodes provide a low impedance path that is capable of switching quickly between OFF and ON states. This capability makes it ideal for use in Class-D amplifiers, improving the overall THD and efficiency of the circuit. Additionally, the 2SB1236TV2R is capable of handling higher power levels than other single-bipolar transistors, making it suitable for high-power stages.

In addition to its amplification role, the 2SB1236TV2R can also provide protection against electrical overloading or short circuits. The transistor\'s built-in protection diodes, when combined with external current-sensing resistors, can detect when the current in the circuit is exceeding its safe levels. When this happens, the transistor will shut off, preventing any further current from flowing, thus protecting the connected components.

The 2SB1236TV2R is an invaluable component with a variety of applications in a diverse range of fields, from amplifiers and power regulation to protection against electrical faults. As a single-bipolar transistor, the device provides amplification, protection, and an impedance path capable of switching quickly between OFF and ON states - making it a reliable choice for designing high-performance circuits.

The specific data is subject to PDF, and the above content is for reference

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