2SB1462J0L Discrete Semiconductor Products

The 2SB1462J0L transistor belongs to the single bipolar junction transistor (BJT) family of semiconductor devices. This type of transistor is mainly used for switching and amplification purposes, as it is capable of both current and voltage control. It is also suitable for use in many digital circuits, making it a key component in a wide variety of electrical and electronics applications.

The 2SB1462J0L is a general-purpose NPN transistor that utilizes silicon for its semiconductor material. It has a maximum of 30 volts for collector-emitter voltage (Vce) and 500 milliamps for collector current (Ic). There are two other important parameters that help to define the performance of this transistor: the collector-emitter saturation voltage (Vce (sat)) and the hFE collector-emitter gain. The 2SB1462J0L has a collector-emitter saturation voltage of 0.5V and a high hFE collector-emitter gain of 500.

Due to its high power handling capacity, a wide collector-emitter voltage range, and excellent switching capability, the 2SB1462J0L is suitable for use in many applications. Some of these applications include operating relays, amplifying signals, and controlling current in electronic circuits. Furthermore, due to its low collector-emitter saturation voltage and large hFE collector-emitter gain, this transistor is suitable for use in switching and voltage amplification circuits.

The working principle of a 2SB1462J0L transistor is based on the bipolar junction, or operative, principle. In this principle, two p-type and n-type semiconductor materials are applied on a single substrate forming two p-n junctions. These two junctions form three loops, with an emitter, base, and collector, thereby forming a single transistor device. In a 2SB1462J0L, when a small amount of current is applied to the base terminal, this current is amplified by the transistor, controlling a larger current between the collector and the emitter. This condition is known as the active region of operation.

When a large amount of current is applied to the base terminal of a 2SB1462J0L transistor, it becomes saturated and its collector current is almost equal to its emitter current. This is known as the saturation region of operation, and is usually seen when the base current is greater than the minimum collector-emitter voltage. Finally, the 2SB1462J0L transistor can also enter a cutoff region, in which the collector current is almost zero. This occurs when the emitter-base voltage is below the minimum collector-emitter voltage.

Overall, the 2SB1462J0L is a general-purpose transistor used for switching and amplifying signals in many electronic circuits. It also has low saturation voltage and high collector-emitter gain, which makes it suitable for various signal-processing applications. Furthermore, it is also suitable for power control, signal amplification, and Power On/Off switching applications.