2SB1124T-TD-H Allicdata Electronics
Allicdata Part #:

2SB1124T-TD-H-ND

Manufacturer Part#:

2SB1124T-TD-H

Price: $ 0.16
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 50V 3A PCP
More Detail: Bipolar (BJT) Transistor PNP 50V 3A 150MHz 500mW S...
DataSheet: 2SB1124T-TD-H datasheet2SB1124T-TD-H Datasheet/PDF
Quantity: 1000
2000 +: $ 0.15299
Stock 1000Can Ship Immediately
$ 0.16
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Power - Max: 500mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PCP
Base Part Number: 2SB1124
Description

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The 2SB1124T-TD-H is a type of bipolar junction transistor (BJT) classified as a single transistor. It is a small-signal-amplification type and is composed of one p-type semiconductor layer and two n-type layers. As a result of this structure, it is also known as an NPN transistor and has an inherent amplification factor (β) and direct current gain (hFE).

The 2SB1124T-TD-H has a voltage rating of 350V, a power dissipation of 0.2W and a high current gain of up to 500. Due to its high current gain, it is often used in combinational circuits, amplifiers and drivers, and switchers. The wide range of currents and voltages this transistor can handle makes it suitable for a variety of applications, including power-supply circuits, low-frequency circuits, small-signal amplifying, switching circuits and image sensors. Its low power dissipation also makes it suitable for use in applications where power consumption must be kept to a minimum.

The working principle of the 2SB1124T-TD-H is based on the fact that when a voltage is applied between the base and emitter, electrons are drawn from the emitter to the base and form a layer of medium conductivity between them. This medium conductivity layer is called the base. When a voltage is then applied between the collector and the base, current will flow between them and the transistor will act as an amplifier. Since the collector carries away most of the current, the voltage at the collector is lower than the voltage at the base, which results in an amplification of the signal.

In addition to its use as an amplifier, the 2SB1124T-TD-H transistor can also be used as an isolator or a switch. When used as an isolator, the transistor conducts current in only one direction, allowing it to isolate a signal from a source and prevent any current from flowing back. When used as a switch, the transistor is connected to a logic input, which when activated causes the transistor to turn on or off and thus control the flow of current. This can be used to control different parts of a circuit.

The 2SB1124T-TD-H is an invaluable component for various applications, allowing engineers to create designs with high performance levels, efficient energy use and low power dissipation. Its wide spectrum of voltage and current ratings, and its multiple use as an amplifier, isolator or switch make it an ideal choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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