2SB1181TLQ Allicdata Electronics
Allicdata Part #:

2SB1181TLQTR-ND

Manufacturer Part#:

2SB1181TLQ

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PNP 80V 1A SOT-428
More Detail: Bipolar (BJT) Transistor PNP 80V 1A 100MHz 10W Sur...
DataSheet: 2SB1181TLQ datasheet2SB1181TLQ Datasheet/PDF
Quantity: 2500
Stock 2500Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Not For New Designs
Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Power - Max: 10W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: CPT3
Base Part Number: 2SB1181
Description

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The 2SB1181TLQ is a bipolar junction transistor (BJT) which falls under the single transistor category and is used for a variety of applications. This device is composed of a base, collector and emitter which are connected through a three-pin arrangement. It is primarily used in circuit applications such as amplifiers, switches, and power management circuits. In addition, this transistor is also used in devices that require high-speed switching and current regulation.

The 2SB1181TLQ is mainly used for amplifying signals in communication-related circuits. It is designed to deliver a high amount of current to meet the need to operate various types of devices. When used in power management systems, this transistor can operate high-power circuits and provides protection against unintended voltage overloads. Moreover, it also acts as a switch in devices and functions as a switching current regulator.

The working principle of the 2SB1181TLQ relies upon the movement of electrons in the semiconductor material of the transistor. When a small current is applied to the base terminal, a larger current is passed through the collector to the emitter terminal. This is due to the base being doped with impurities to form a p-n junction and the large majority of electrons being in the collector. By modulating the current passing through the base terminal, the flow of current in the collector-emitter sideways can be controlled based on the current ratio between the collector and emitter.

In addition to this, the transistor can be used for amplification as well. When a small input signal is applied to the base terminal, it increases the current passing through the collector-emitter and thus amplifying the output signal. These same principles are used in all single transistor devices and is the key reason why these types of transistors are used in various types of applications.

Overall, the 2SB1181TLQ can be used for a variety of applications due to its working principle and its p-n junction. It is a single transistor which is versatile and can be used for current regulation, protection, amplification and switching. Its small size and low power consumption make it a great choice for many projects and applications.

The specific data is subject to PDF, and the above content is for reference

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