2SB1184TLP Allicdata Electronics
Allicdata Part #:

2SB1184TLP-ND

Manufacturer Part#:

2SB1184TLP

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PNP 50V 3A SOT-428
More Detail: Bipolar (BJT) Transistor PNP 50V 3A 70MHz 1W Surfa...
DataSheet: 2SB1184TLP datasheet2SB1184TLP Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Not For New Designs
Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 500mA, 3V
Power - Max: 1W
Frequency - Transition: 70MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: CPT3
Base Part Number: 2SB1184
Description

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2SB1184TLP Application Field and Working Principle

The 2SB1184TLP is a PNP type based bipolar junction transistor (BJT). This device features a low saturation voltage, high collector current, and high collector-emitter voltage. By using this transistor, various colorful products can be designed.

Main Applications

The 2SB1184TLP is mainly applied in audio amplification, signal switching, and power management. It is also used in various biasing and signal control circuits.

Working Principle

A bipolar junction transistor (BJT) is a three-terminal device, with two terminals (collector and emitter) on the same side, and one terminal (base) on the opposite side. The emitter-base junction is forward-biased, while the collector-base junction is reverse-biased. When a small current is applied to the base, it flows into the collector terminal, and is amplified by the transistor.

The 2SB1184TLP has a high collector current. When a small amount of current flows into the base terminal, a large amount of current flows from the collector to the emitter terminal. This increased current further increases the collector current and creates a high collector-emitter voltage (Vce). This makes the 2SB1184TLP ideal for use in audio amplification and power management.

Features

The 2SB1184TLP transistor offers several noteworthy features. It has a low saturation voltage, ensuring that the device is able to operate at high speeds. It also has a high collector current, and is capable of handling currents of up to 1.2A. It also has a high collector-emitter voltage, with a maximum rating of 40V. This makes the 2SB1184TLP suitable for use in power management and audio amplification. Furthermore, the 2SB1184TLP also has a low collector-base capacitance, ensuring that it can operate with minimal distortion.

Package

The 2SB1184TLP comes in the TO-92 package, which makes it easy to install and handle. The package dimensions for the 2SB1184TLP are 4.5 mm*4.0 mm*1.5 mm, meaning that it can fit into small areas for enhanced portability. Moreover, it also has a corrosion resistance property, ensuring that it can withstand harsh environmental conditions.

Conclusion

The 2SB1184TLP is a versatile PNP-type BJT transistor that offers a low saturation voltage, high collector-emitter voltage, and low collector-base capacitance. It is mainly used in audio amplification, signal switching, and power management. The 2SB1184TLP also comes in the TO-92 package, which is easy to install and handle. All these feature combined make the 2SB1184TLP an ideal choice for designs that require low distortion, high switching speeds, and enhanced portability.

The specific data is subject to PDF, and the above content is for reference

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