Allicdata Part #: | 2SB1216T-TL-H-ND |
Manufacturer Part#: |
2SB1216T-TL-H |
Price: | $ 0.35 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 100V 4A TP-FA |
More Detail: | Bipolar (BJT) Transistor PNP 100V 4A 130MHz 1W Sur... |
DataSheet: | 2SB1216T-TL-H Datasheet/PDF |
Quantity: | 1000 |
700 +: | $ 0.31798 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Last Time Buy |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 4A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 200mA, 2A |
Current - Collector Cutoff (Max): | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 500mA, 5V |
Power - Max: | 1W |
Frequency - Transition: | 130MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | 2-TP-FA |
Base Part Number: | 2SB1216 |
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The 2SB1216T-TL-H is a single bipolar junction transistor (BJT) which is used for applications that require high voltage to function, such as in high-frequency circuit and power transistors. This particular type of device acts as an amplifier for electrical signals, increasing their strength and voltage and thus making them easier to control and use. To understand how the 2SB1216T-TL-H performs in a circuit, it is essential to understand its working principle.
At its core, the 2SB1216T-TL-H is comprised of a p-type layer surrounded by an n-type layer, with a barrier between them called the base. This structure allows the electronic charge to flow in one direction through the BJT, which produces a current in the load. At the same time, it can also act as a switch, allowing for higher levels of control to be achieved when the transistor is activated. The important part about this device is the voltage that it can operate at, as the gate voltage needs to be much higher than the standard logic levels.
For example, in power transistors, the 2SB1216T-TL-H can be used as a current regulator. This means that it can draw less current from a given voltage, as the transistor will “shut” and thus prevent any further charge from passing through. This is useful for controlling high-frequency power circuits, as it provides a steady flow of electrical current, with minimal power consumption.
The 2SB1216T-TL-H can also be used in a variety of other applications, including audio amplifiers and modulators. In these cases, the transistor will act as a voltage amplifier, increasing the voltage and thus the amplitude or wave height of the signal being amplified. This is essential for audio outputs to reach the desired levels of quality, as the extra power provided by the transistor makes it easier to accurately reproduce the sound wave.
In communications applications, the 2SB1216T-TL-H can be used as part of a frequency-shift keying (FSK) transmitter circuit. This is because it is capable of handling voltages up to 1.6V, which are necessary for the FSK modulation technique. This technique is used to send information in digital format, and is often found in digital communication applications such as GSM, DECT, and Bluetooth.
Lastly, the 2SB1216T-TL-H transistor can also be used as an oscillator. This is because it is able to handle frequencies up to 500MHz, making it perfect for RF circuits. In these cases, the transistor acts as an amplifier to a very specific frequency, which is then used to create the desired waveform. This is essential for radio communication, broadcasting and even Wi-Fi signals.
The 2SB1216T-TL-H is a versatile device which can be used in a variety of applications requiring a high-voltage capability. It has a wide variety of uses, such as in power transistors, audio amplifiers, frequency-shift keying transmitters, and as an oscillator. By understanding the working principle of the 2SB1216T-TL-H, engineers can find many uses for the device.
The specific data is subject to PDF, and the above content is for reference
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